BSC028N06NSTATMA1 vs IPB081N06L3GATMA1 Comparison
Detailed side-by-side comparison of BSC028N06NSTATMA1 by Infineon and IPB081N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β ActiveInfineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC028N06NSTATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Part Number Base | BSC028N06NS | β |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | β |
| Total Gate Charge Qg | 37 nC @ VGS=10V | β |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | β |
| Output Capacitance Coss | 825 pF | β |
| Reverse Transfer Capacitance Crss | 56 pF | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 100 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | 1 (unlimited) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | β | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | β | 79 W |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Number of Pins | β | 3 |
| Pin Configuration | β | Gate / Drain / Source (D2PAK standard) |