BSC028N06NSTATMA1 vs IPT008N06NM5LFATMA1 Comparison
Detailed side-by-side comparison of BSC028N06NSTATMA1 by Infineon and IPT008N06NM5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β ActiveInfineon
IPT008N06NM5LFATMA1
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΞ© N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 β ActiveSpecification Comparison
| Parameter | BSC028N06NSTATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $5.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Part Number Base | BSC028N06NS | β |
| Technology | MOSFET N-Channel (OptiMOS 5) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | β |
| Total Gate Charge Qg | 37 nC @ VGS=10V | β |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | β |
| Output Capacitance Coss | 825 pF | β |
| Reverse Transfer Capacitance Crss | 56 pF | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 100 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-HSOF-8 (single, flat-lead) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | β |
| Part Family | β | OptiMOS 5 / Linear FET |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 454 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | β | 0.8 mΞ© |
| Gate-Source Threshold Voltage VGS(th) | β | 3.6 V (typ, 250 Β΅A test) |
| Power Dissipation (Tc) | β | 278 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Gate Drive (recommended) | β | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | β | Compliant |
| AEC-Q100 | β | not_qualified (industrial-grade by default) |