BSC030N03LSGATMA1 vs BSC030N03MSGATMA1 Comparison
Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSC030N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveInfineon
BSC030N03MSGATMA1
BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΞ© OptiMOS | Infineon
BSC030N03MSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N03LSGATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 3M |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | β |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | β |
| RDS(on) Max @ VGS=10V | 3 mOhm | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | β |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | β |
| Output Charge (Qoss) | 66 pF | β |
| Input Capacitance (Ciss) Typ | 4.3 nF | β |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | β |
| Power Dissipation (Pd) @ Tc=25C | 69 W | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +150Β°C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Rated | Yes (100% tested) | β |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 21 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Drain-Source On-Resistance (RDS(on)) | β | 3.0 mΞ© (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc=25Β°C | β | 69 W |
| Drive Voltage (Min/Max RDS(on)) | β | 4.5V / 10V |
| Status | β | Active |