BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon
MPN: BSC030N03MSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.89 | $0.89 |
| 10 | $0.75 | $7.50 |
| 100 | $0.66 | $66.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.51 | $510.00 |
| 5,000 | $0.43 | $2,150.00 |
BSC030N03MSGATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a sufficient gate-source voltage (VGS) is applied. N-channel MOSFETs are the dominant switch topology in synchronous buck converters, low-side switches in half-bridges, and OR-ing/load-switch circuits because their lower on-resistance per unit area compared to P-channel devices minimizes conduction loss. Within the broader semiconductor taxonomy, this part belongs to: MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key differentiating features include the 3 mΩ max RDS(on) at VGS=10V (per the Infineon datasheet title description), a thermally efficient PG-TDSON-8 exposed-pad package, and operation from -55°C to +150°C junction. The OptiMOS 3M family is specifically tuned for synchronous rectification in switched-mode power supplies (SMPS) where both low conduction loss and low switching loss matter. Its figure of merit (FOM = RDS(on) × Qg) places it among the most efficient 30V parts available.
Architecturally, the device uses trench MOSFET technology with a vertical drain structure on the PG-TDSON-8 exposed-pad leadframe. The exposed thermal pad (pin 1 / drain tab) provides direct heat sinking to the PCB copper, enabling the 69W Tc dissipation figure when properly mounted to adequate copper area.
Typical applications include synchronous rectification in server and telecom VRMs, DC-DC converter high-side and low-side switches, hot-swap / OR-ing circuits in networking equipment, and motor drive half-bridges in 12V battery systems. The 30V rating provides ample headroom for 12V bus rails with transient tolerance.
When designing with this MOSFET, ensure the gate drive voltage reaches at least 4.5V (logic-level threshold) and the PCB copper area beneath the exposed pad is sized to keep junction temperature below 125°C under worst-case load. Use a gate resistor in the 10-47Ω range to control switching ringing and EMI.
This page synthesizes distributor pricing, drop-in alternatives in the same PG-TDSON-8 footprint, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSC030N03MSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC030N03MSGATMA1 (same form factor and footprint) — differing in Package, Drain-Source Voltage (VDS), Technology, Operating Junction Temperature, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC030N03LSGATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →BSC035N04LSGATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC0901NDATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC034N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC0993NDATMA1
✅ Drop-In✓ In Stock
$1.32 / Unit
View Datasheet →BSC042NE7NS3GATMA1
✅ Drop-In✓ In Stock
$1.24 / Unit
View Datasheet →BSC030N03MSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3M |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc=25°C | 69 W |
| Operating Junction Temperature | -55°C to +150°C |
| Package | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V |
| Status | Active |
BSC030N03MSGATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (internally bonded to drain tab) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin EP | Drain (Exposed Pad) — Thermal pad, internally connected to drain for PCB heatsinking |
Safe Operating Area
Typical Applications
BSC030N03MSGATMA1 is suitable for 6 applications: Synchronous Rectification in Server VRMs, Telecom and Datacom DC-DC Converters, Hot-Swap and OR-ing Load Switches, Motor Drive Half-Bridge (12V Battery Systems), Battery Management System (BMS) Protection, Industrial Switch-Mode Power Supplies (SMPS).
Synchronous Rectification in Server VRMs
The BSC030N03MSGATMA1's 3.0 mΩ typical RDS(on) at VGS=10V makes it ideal for synchronous rectification in 12V-input server VRMs and POL converters. Its low gate charge and ultra-low output charge per the Infineon OptiMOS 3M datasheet minimize switching loss at high operating frequencies (300-500 kHz), enabling higher power density. Compared to a Schottky rectifier, this MOSFET reduces conduction loss by 50-70% at the same current level, directly improving converter efficiency by 1-3%.
Recommended
Telecom and Datacom DC-DC Converters
In 24V-bus telecom rectifier modules and -48V-distributed datacom systems, the BSC030N03MSGATMA1 serves as the low-side switch in buck and buck-derived topologies. The 30V VDS rating provides comfortable margin above 24V nominal bus rails with transient tolerance, and the PG-TDSON-8 footprint delivers 69W power dissipation at Tc=25°C per Infineon's thermal characterization. Compared to a discrete IGBT at this voltage class, the MOSFET achieves 3-5x faster switching and avoids tail-current losses.
Recommended
Hot-Swap and OR-ing Load Switches
The BSC030N03MSGATMA1 with 100A continuous drain at Tc=25°C and 3 mΩ RDS(on) is well-suited for -48V-distributed OR-ing and 12V hot-swap load switches. Its low RDS(on) limits steady-state voltage drop to ~30 mV at 10A (versus 100+ mV for higher-resistance parts), reducing I²R loss in always-on paths. Use it with a controller like BTS series for current-limit / fault management.
Recommended
Motor Drive Half-Bridge (12V Battery Systems)
In 12V battery-powered motor drives such as e-bike controllers, robotics actuators, and small appliance drives, the BSC030N03MSGATMA1 forms the half-bridge switches driven by a gate driver IC. Its 100A pulsed capability supports motor inrush currents, while the 3 mΩ RDS(on) cuts conduction loss by 40-60% versus a 5-6 mΩ competitor. The PG-TDSON-8 footprint allows compact 4-layer PCB designs with adequate copper heatsinking.
Recommended
Battery Management System (BMS) Protection
In multi-cell Li-ion battery management systems for power tools, e-mobility, and energy storage, the BSC030N03MSGATMA1 serves as the low-side protection switch or pre-charge path. The 30V rating covers 4S-6S Li-ion packs, and 3 mΩ RDS(on) at 21A continuous minimizes steady-state loss. Its -55°C to +150°C junction operating range handles cold-crank and high-temperature pack conditions.
Recommended
Industrial Switch-Mode Power Supplies (SMPS)
In industrial 24V/48V SMPS modules and DIN-rail power supplies, the BSC030N03MSGATMA1 acts as the primary-side or secondary-side synchronous switch. Its ultra-low gate and output charge per the Infineon datasheet enables operation above 500 kHz, reducing magnetic component size. Compared to older planar MOSFETs, the OptiMOS 3M process delivers measurably better light-load efficiency, helping designs meet modern 80 PLUS-style efficiency targets.
Recommended
Recommended Products Summary
Engineering reference data for BSC030N03MSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC030N03LSGATMA1 | BSC035N04LSGATMA1 | BSC0901NDATMA1 | BSC034N06NSATMA1 | BSC0993NDATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS Rating | 30 V | 25 V | 40 V | 30 V | 60 V | 30 V | 75 V |
| RDS(on) typical @ VGS=10V | 3.0 mΩ | 3.0 mΩ | 3.5 mΩ | 9.0 mΩ | 3.4 mΩ | 9.9 mΩ | 4.2 mΩ |
| Continuous Drain ID @ Ta | 21 A | 21 A | 20 A | 13 A | 21 A | 11 A | 19 A |
| Power Dissipation @ Tc | 69 W | 69 W | 69 W | 57 W | 69 W | 94 W | 94 W |
| Series / Process | OptiMOS 3M | OptiMOS 3M | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
Key Differentiators
- Best-in-class RDS(on) of 3.0 mΩ in PG-TDSON-8 footprint at 30V (vs BSC0901NDATMA1)
- OptiMOS 3M process enables high-frequency operation (vs BSC034N06NSATMA1)
- 100A pulsed capability in compact PG-TDSON-8 package (vs BSC0993NDATMA1)
Design Notes
Estimated: at 100A continuous drain current into the PG-TDSON-8-1 with a properly designed 4-layer PCB copper pad (≥6 cm² of 2oz copper on both sides), thermal resistance θJA drops to roughly 35-40 C/W. At 100A and 3 mΩ RDS(on), conduction loss is 30W, giving a junction-to-ambient rise of approximately 1100°C/watt ratio resulting in 33°C rise per watt, or 990°C absolute junction temperature — clearly above the 150°C limit. Derate to ≤25A continuous on PCB only, or implement active cooling at higher loads. The exposed thermal pad (pin EP) MUST be soldered to a copper pour — dry-solder or skip-the-pad mounting destroys thermal performance.
Place the gate drive loop area as small as physically possible: keep the gate resistor (10-47Ω) within 5mm of the gate pin, and route the gate drive return trace directly to the source pins (1, 2, 3, 6, 7, 8) rather than to a remote ground. Source inductance in the gate return loop causes gate-source ringing that can exceed VGS(max)=±20V and permanently damage the MOSFET. Add a 1-10kΩ gate-source pull-down resistor to prevent unintended turn-on during power-up.
Do not exceed VGS=±20V absolute maximum — even brief transients from a poorly-tuned gate drive can punch through the gate oxide. Always ensure the gate drive voltage stabilizes between 4.5V (logic-level turn-on threshold) and 10V (typical full-enhancement) — driving at 12V or higher without clamping can cause long-term reliability drift. Avoid operating in the linear region (VDS partially on) for more than microseconds — this places the device in high-power-dissipation SOA territory with no time for thermal recovery.
For high-current switching applications, use a Kelvin-source connection where practical by separating the power source path (pins 6,7,8) from the gate-drive source sense path. This eliminates source-inductance feedback and is the standard technique for high-frequency synchronous rectifier layouts. Place input bulk capacitors as close as possible to the drain (pin 5) to minimize switching-node parasitic inductance.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100/Q101 qualified per verified distributor data — choose an Infineon automotive-grade OptiMOS variant for AEC-Q101 requirements. Lead-free reflow soldering compatible per JEDEC J-STD-020.
