BSC030N03MSGATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC030N03MSGATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03MSGATMA1
BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΞ© OptiMOS | Infineon
BSC030N03MSGATMA1 β ActiveInfineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N03MSGATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.43 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3M | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at Ta | 21 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΞ© (typical at VGS=10V) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th)] |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc=25Β°C | 69 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V | β |
| Status | Active | β |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |
| Operating Temperature Range | β | -55C to +150C |
| MSL Level | β | [DATA_NEEDED: MSL level] |