BSC032N04LSATMA1 vs BSC011N03LSIATMA1 Comparison

Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and BSC011N03LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 ✓ Active

Specification Comparison

Parameter BSC032N04LSATMA1 BSC011N03LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 40V
FET Type N-Channel
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) at Ta=25°C 21 A
Continuous Drain Current (ID) at Tc=25°C 98 A
RDS(on) max at VGS=10V 3.2 mΩ
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 52 W
Gate-Source Voltage (VGS) ±20 V
Technology OptiMOS 5 trench
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-7 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55°C to +175°C -55 °C to +150 °C
RoHS Status Compliant Compliant
Lead-Free Yes
Product Family OptiMOS™ 30 V
Channel Type N-Channel
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W
MSL Level 1 (per JEDEC J-STD-020)

Datasheets & Resources

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