BSC039N06NSATMA1 vs IPD031N06L3GATMA1 Comparison
Detailed side-by-side comparison of BSC039N06NSATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveInfineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΞ© N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC039N06NSATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA | 19 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | 400 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Power Dissipation at TA (PD) | 2.5 W | β |
| Power Dissipation at TC (PD) | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | OptiMOS 5 (TrenchFET-style) | MOSFET (Metal Oxide) |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| Maximum Power Dissipation (PD) at TC=25Β°C | β | 167 W |
| RDS(on) Max at VGS=10V | β | 3.1 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | β | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range | β | -55Β°C to +175Β°C |