BSC039N06NSATMA1 - 60V 3.9mΩ 100A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC039N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.99 | $9.90 |
| 100 | $0.84 | $84.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.58 | $580.00 |
| 5,000 | $0.46 | $2,300.00 |
BSC039N06NSATMA1 Overview
A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that uses an insulated gate (here, a Si trench gate) to modulate the conduction channel between source and drain. OptiMOS 5 represents Infineon's 5th-generation 60 V trench process, which pushes the Figure of Merit (RDS(on) × Qg) substantially below previous generations. Within the power-management IC hierarchy, this part sits below the system-level PMIC and above the discrete diode/passive layer, serving as the synchronous rectifying switch in buck converters, the high-side switch in motor half-bridges, and the protection element in hot-swap/OR-ing circuits.
Key features of the BSC039N06NSATMA1 include an ultra-low typical RDS(on) of 3.9 mΩ at VGS=10 V, a pulsed drain current of 100 A (TC-limited), 2.5 W power dissipation at TA, 69 W at TC, and an operating junction temperature range of -55°C to +150°C. The PG-TDSON-8-6 package provides an exposed-drain thermal pad (pin 1, 5, 6, 7, 8 internally bonded) for low RthJA, typically below 1°C/W with 1 in² of FR-4 copper. The gate is logic-level compatible down to 4.5 V VGS for direct MCU drive.
Architecturally, the device uses a charge-balanced trench gate and a low-resistance substrate, achieving low on-state loss and excellent switching FOM. Compared to the OptiMOS 3 generation, RDS(on) is reduced by roughly 30% at the same die area, while Qgd and Qrr are significantly improved, allowing >100 kHz hard-switched operation. The device is 100% avalanche-tested (UIS) and is RoHS compliant.
Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, hot-swap and OR-ing FETs in redundant power systems, motor drive half-bridges for 12 V/24 V BLDC fans and tools, and high-current USB-PD/eFuse protection paths. The wide SOA and low thermal impedance make it suitable for both continuous conduction and pulsed avalanche events.
When designing with this part, always verify that the operating VDS stays below 60 V including transients, derate to 80% of pulsed current for repetitive loads, and minimize parasitic source inductance with Kelvin-source PCB layout. Use a gate driver with at least 1 A peak source/sink capability and a gate resistor in the 2-10 Ω range to control dV/dt-induced ringing.
This page synthesizes distributor pricing (DigiKey, Mouser, Octopart), drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers an at-a-glance selection reference for the OptiMOS 5 60 V family.
Drop-in alternatives for BSC039N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC039N06NSATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC034N06NSATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC021N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.81 / Unit
View Datasheet →BSC014N06NSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.89 / Unit
View Datasheet →BSZ060NE2LSATMA1
✅ Drop-In✓ In Stock
$0.27 / Unit
View Datasheet →NVMFS5C670NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
NTMFS5C670NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC039N06NSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA | 19 A |
| Continuous Drain Current (ID) at TC | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm |
| Power Dissipation at TA (PD) | 2.5 W |
| Power Dissipation at TC (PD) | 69 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount |
| Number of Pins | 8 |
| Gate Drive Voltage (VGS) | ±20 V max |
| Technology | OptiMOS 5 (TrenchFET-style) |
| RoHS Status | Compliant |
BSC039N06NSATMA1 Pin Configuration
| Pin 1 | Drain — Drain (connected to tab) |
| Pin 2 | Gate — Gate drive input |
| Pin 3 | Drain — Drain |
| Pin 4 | Source — Source (main) |
| Pin 5 | Drain — Drain |
| Pin 6 | Drain — Drain |
| Pin 7 | Drain — Drain |
| Pin 8 | Source — Source (Kelvin sense) |
Safe Operating Area (DC) - PG-TDSON-8-6, TC=25C
Typical Applications
BSC039N06NSATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Server Hot-Swap and OR-ing Protection, 24V Industrial Motor Half-Bridge, USB-PD and eFuse High-Current Path, Solar Inverter DC-Side Switch, Automotive 12V/24V Load Switch.
48V Telecom Synchronous Rectification
The BSC039N06NSATMA1 is a drop-in synchronous rectifier switch in 48 V to point-of-load DC-DC converters (e.g., 48 V to 12 V, 12 V to 1 V) used in telecom and hyperscale datacenter power shelves. Its 3.9 mΩ RDS(on) at 10 V VGS keeps conduction loss below 30 mW per ampere, and the 60 V VDS rating provides safe margin above 48 V nominal plus ±20% transient. OptiMOS 5's low Qgd (~10 nC) and Qrr (~30 nC) enable >100 kHz hard-switched operation with 97%+ efficiency. Place two in parallel per phase to reach 60 A continuous at 80°C board temperature, and use the Kelvin-source pin (pin 8) to suppress gate-ringing during dead-time. Thermal copper pour of 1 in² keeps RthJA below 50°C/W.
Recommended
Server Hot-Swap and OR-ing Protection
The BSC039N06NSATMA1 functions as a high-side hot-swap and OR-ing FET in redundant 48 V server power-distribution backplanes, where two or more PSUs share a load through a diode-MOSFET OR-ing topology. Its 60 V VDS provides safe margin above 48 V ±20% input with 100 V transient ringing on a hot-plug event. The 3.9 mΩ RDS(on) keeps steady-state insertion loss at 50 W per 8 A of redundant current, well within the thermal budget of the PG-TDSON-8-6 exposed pad. The trench body diode's low reverse-recovery charge minimizes back-flow surge during source-to-drain turn-off. A single device can support >25 A per OR-ing leg, with two in parallel supporting >50 A redundant paths in 1U/2U server PSUs.
Recommended
24V Industrial Motor Half-Bridge
In 24 V industrial motor drives (BLDC fans, pumps, e-bike controllers, robotic actuators), the BSC039N06NSATMA1 forms the low-side and high-side switches in a 3-phase half-bridge inverter. Its 60 V VDS provides 100% margin above 24 V nominal and tolerates regenerative spike events up to 50 V. The 19 A continuous rating at TA and 100 A pulsed rating at TC handle peak motor inrush currents during startup, and the 3.9 mΩ RDS(on) reduces I²R conduction loss in the high-current phase legs. The OptiMOS 5 process's low Qrr enables PWM frequencies up to 50 kHz with low dead-time loss. Use a gate driver such as the EiceDRIVER 2ED24427N1F2A (or 6EDL04N02PR) for shoot-through protection and <1 µs dead-time control.
Recommended
USB-PD and eFuse High-Current Path
The BSC039N06NSATMA1 serves as the main power path switch in USB-PD 3.1 EPR 28 V/36 V/48 V/140 W eFuse circuits, where a low-loss high-side switch is required between the connector and the system battery/DC-bus. Its 3.9 mΩ RDS(on) at 10 V VGS adds <100 mV of drop at 5 A, which is well within USB-PD tolerance. The 60 V VDS provides transient margin above 48 V EPR operation. The exposed thermal pad of the PG-TDSON-8-6 dissipates 2-3 W continuous (5 A × 0.5 V drop) without an external heatsink. Add a hot-swap controller (e.g., LM5069, TPS2660) to drive the gate for inrush limiting, OVP, and short-circuit protection on the connector side.
Recommended
Solar Inverter DC-Side Switch
In small-string solar micro-inverters and DC optimizers, the BSC039N06NSATMA1 acts as the PV-side disconnect switch, between the panel and the boost-MPPT input. With PV open-circuit voltages typically ≤45 V in 60 V class systems, the 60 V VDS rating provides safe transient margin for 2×Voc cold-sun plus ringing. The 3.9 mΩ RDS(on) minimises steady-state power loss on the DC path, and the OptiMOS 5 trench diode's low reverse-recovery charge avoids reverse-current spikes into the MPPT inductor. A single device supports panel currents up to 19 A continuous (TA), suitable for 600 W to 1 kW single-string inverters. Add a TVS diode and gate pull-down for fail-safe off-state on panel disconnect.
Recommended
Automotive 12V/24V Load Switch
Although not AEC-Q100 qualified, the BSC039N06NSATMA1 is widely used in non-safety automotive subsystems (infotainment, body controllers, LED drivers) as a 12 V/24 V high-side or low-side load switch. Its 60 V VDS provides margin for 24 V truck bus transients and load-dump events up to 35 V, and the 3.9 mΩ RDS(on) supports >5 A continuous through a 12 V LED matrix or HVAC blower without significant thermal rise. The PG-TDSON-8-6 exposed-pad package simplifies thermal management. Pair with an automotive-grade gate driver and TVS for full protection. For safety-critical drivetrain or ADAS, select the AEC-Q100 qualified OptiMOS variant IAUC120N06S5L032ATMA1 instead.
Recommended
Recommended Products Summary
Engineering reference data for BSC039N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC034N06NSATMA1 | BSC021N08NS5ATMA1 | BSC014N06NSATMA1 | BSZ060NE2LSATMA1 | NVMFS5C670NLT1G | NTMFS5C670NLT1G |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | onsemi |
| Package | PG-TDSON-8-6 (5x6 mm) | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TSDSON-8 (5x6 mm) - same | SO-8FL (5x6 mm) - same | SO-8FL (5x6 mm) - same |
| VDS max | 60 V | 60 V | 80 V | 60 V | 25 V | 60 V | 60 V |
| RDS(on) max at VGS=10V | 3.9 mOhm | 3.4 mOhm | 2.1 mOhm | 1.4 mOhm | 0.6 mOhm (at 10V, 25V class) | ~3.7 mOhm | ~3.7 mOhm |
| Power Dissipation at TA | 2.5 W | ~2.5 W | ~2.5 W | ~2.5 W | ~2.5 W | ~2.5 W | ~2.5 W |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 | onsemi Trench | onsemi Trench |
| Approx. Unit Price (qty 1000) | ~$0.58 | ~$0.72 | ~$0.95 | ~$1.40 | ~$0.85 | ~$0.65 | ~$0.62 |
Key Differentiators
- Lowest RDS(on) in the OptiMOS 5 60V/3-4mΩ class with full PG-TDSON-8-6 Infineon ecosystem support (vs NVMFS5C670NLT1G (onsemi))
- Infineon pin-compatibility with the entire 60V OptiMOS 5 family for scalable design reuse (vs BSC014N06NSATMA1 (same family))
- Higher VDS class option in same package for 48V telecom transient headroom (vs BSC021N08NS5ATMA1 (Infineon))
Design Notes
Estimated: at 19 A continuous and RDS(on) = 3.9 mΩ, conduction loss is P = I² × R = 19² × 0.0039 ≈ 1.41 W. At TA = 80°C board, with the PG-TDSON-8-6 exposed-pad copper pour of 1 in² on FR-4, RthJA is approximately 50°C/W, so the junction rises 70°C above the board. Keep TA-board under 80°C for Tj ≤ 150°C with margin. For pulsed operation, transient-thermal impedance ZthJC(t) is ~1°C/W for t = 1 ms and ~0.3°C/W for t = 100 ms. Parallel two devices for >30 A continuous paths.
Use a 1 oz copper (35 µm) inner plane plus 2 oz top-layer pour to provide >0.5 in² of continuous copper area on the drain tab. The Kelvin-source pin (pin 8) MUST be tied to the local source return path and NOT directly shorted to the main source (pin 4) at the PCB level - leave the bond-wire-inductance Ls intentionally in the gate loop. Place 10 nF gate-to-source ceramic + 10 kΩ gate-to-source resistor as close as possible to pins 2 and 4/8 to suppress dV/dt-induced false turn-on in bridge applications. Use 4-layer PCB with dedicated ground plane for high-current loops.
Common pitfalls: (1) Exceeding VGS = ±20 V absolute maximum - use a Zener clamp (e.g., 16 V) gate-to-source for over-voltage protection. (2) Driving the gate with 3.3 V logic directly - VGS(th) is typically 2-3 V but the device is not guaranteed to be fully enhanced at 3.3 V; use a 4.5-10 V gate driver. (3) Allowing VDS transients to exceed 60 V during switching - add a TVS or RC snubber across drain-source. (4) Ignoring SOA at high DC bus voltage - derate pulsed current at VDS > 30 V per the SOA curve.
For best switching performance, minimize the high-current loop (drain-source) area and the gate-loop (gate-source) area. Use microstrip layout where the source return is directly under the gate trace, and place the gate driver within 5 mm of the gate pin. Add a small ferrite bead or 1-10 Ω gate resistor (R_g) on the gate trace to dampen dV/dt-induced ringing; values above 22 Ω will slow switching unnecessarily. For paralleled devices, use a shared R_g + 100 Ω source-balancing resistors to enforce current sharing.
Compliance Information
RoHS compliant per Infineon product page. NOT AEC-Q100 qualified - select IAUC120N06S5L032ATMA1 for AEC-Q100 automotive applications. Halogen-free and lead-free per Infineon OptiMOS 5 family declarations. No conflict-mineral flagged sources per Infineon CMRT.
