BSC040N10NS5ATMA1 vs BSC030N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N10NS5ATMA1 by Infineon and BSC030N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveInfineon
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N10NS5ATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.93 | $0.55 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | β |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Continuous Drain Current (ID) max | 136 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 139 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Output Capacitance Reduction | Up to 44% vs previous generation | β |
| RDS(on) Reduction | Up to 43% vs previous generation | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | β |
| Manufacturer | β | Infineon Technologies |
| Product Type | β | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Pulsed Drain Current (ID,pulse) | β | 161 A |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| RDS(on) max at VGS=10 V | β | 3.0 mOhm |
| RDS(on) max at VGS=7 V | β | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | β | 2.5 W |
| Power Dissipation (TC=25C) | β | 139 W |
| Operating Temperature Range (TJ) | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |
| Gate Drive Logic | β | Standard 10V, compatible with 12V drive |
| Optimized Application | β | Synchronous Rectification |