BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC030N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.9 | $0.90 |
| 10 | $0.8 | $8.00 |
| 100 | $0.7 | $70.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
BSC030N08NS5ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switched-mode power supplies, motor drives, and battery protection circuits. Within the broader component taxonomy it sits as a subtype of field-effect transistor (FET) → transistor → discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low-voltage, high-current applications such as 48 V telecom rails, server DC-DC converters, and automotive high-current loads.
Key differentiating features of the BSC030N08NS5 include 3.0 mΩ maximum on-resistance at VGS=10 V, an ID max rating of 100 A (Tc) with 161 A pulsed capability per the Infineon family datasheet, low voltage overshoot during switching transients, and a 2.5 W power dissipation rating on the standard 1.5 mm FR4 reference PCB (139 W on the case). The device supports 12 V standard gate-drive logic and is suitable for high-side and low-side positions in half-bridge, full-bridge, and buck/boost topologies.
At the architectural level, the OptiMOS 5 cell structure reduces gate charge Qg and miller plateau charge Qgd compared with prior generations, lowering switching losses at high di/dt. The 5x6 mm SuperSO8 land pattern offers a thermal resistance compatible with direct copper cooling on standard PCB designs, and the package's low-inductance source connection enables cleaner switching waveforms at multi-hundred-kHz operation.
Typical applications include synchronous rectification in 48 V to point-of-load converters, server and telecom DC-DC stages, battery management protection MOSFETs in 12 V/24 V/48 V systems, hot-swap controllers, motor-drive H-bridges, and high-current load switches in industrial automation. In these roles, the BSC030N08NS5ATMA1 acts as the synchronous rectifier that replaces the lossy Schottky diode, dramatically improving light-load and full-load efficiency.
Designers should observe the absolute maximum ratings carefully: VDS=80 V, VGS=±20 V (transient), ID=100 A continuous at TC=25 °C with appropriate PCB copper area, and TJ max of 150 °C. Operating above 50 °C case temperature requires derating per the datasheet Diagram 2. A low-ESR gate-drive loop, a 10 Ω gate resistor, and adequate VGS decoupling are recommended for clean switching in multi-MHz designs.
This page synthesizes distributor pricing as of 2026-09-11, drop-in alternatives sourced from the Infineon OptiMOS 5 family and authorized cross-references, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSC030N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC030N08NS5ATMA1 (same form factor and footprint) — differing in Package, Technology, RoHS Status, MSL Level, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC021N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.81 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →BSC014N06NSATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →BSC027N04LSGATMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →BSC039N06NSATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →BSC030N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Type | N-Channel Power MOSFET |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 80 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Pulsed Drain Current (ID,pulse) | 161 A |
| Gate-Source Voltage (VGS) max | +/-20 V |
| RDS(on) max at VGS=10 V | 3.0 mOhm |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W |
| Power Dissipation (TC=25C) | 139 W |
| Operating Temperature Range (TJ) | -55C to +150C |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| Lead-Free | Yes |
| Gate Drive Logic | Standard 10V, compatible with 12V drive |
| Optimized Application | Synchronous Rectification |
BSC030N08NS5ATMA1 Pin Configuration
| Pin 1 | S — Source (connected to pins 2, 3 internally) |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (connected to pins 6, 7, 8 and exposed pad internally) |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area - DC
Typical Applications
BSC030N08NS5ATMA1 is suitable for 6 applications: 48V Synchronous Rectification in Server/Telecom DC-DC, Hot-Swap and Load Switch in 24V/48V Industrial Systems, Battery Management Protection in 48V Lithium Packs, BLDC Motor Drive H-Bridge in Power Tools and Robotics, Solar Inverter DC-DC Boost Stage (MPPT), High-Current USB-PD EPR Load Switch.
48V Synchronous Rectification in Server/Telecom DC-DC
The BSC030N08NS5ATMA1 fits 48 V to point-of-load synchronous rectification in server and telecom DC-DC converters because its 80 V VDS provides a 25 V safety margin against 60 V transient events on 48 V rails, while its 3.0 mΩ maximum on-resistance at 10 V VGS keeps conduction loss minimal at 30-60 A load currents. In a typical half-bridge stage, the device replaces the lossy Schottky rectifier on the low-side; OptiMOS 5's 44% lower output capacitance versus prior generations reduces switching loss at 200-500 kHz operation, directly improving light-load efficiency to meet 80 Plus Titanium and Open Compute Project (OCP) ORV3 standards. Designers place it on the same SuperSO8 5x6 mm footprint with a 6 cm² copper drain pour to achieve 139 W dissipation at TC=25 °C.
Recommended
Hot-Swap and Load Switch in 24V/48V Industrial Systems
The BSC030N08NS5ATMA1 is ideal for 24 V and 48 V hot-swap controllers in industrial automation and telecom shelves because its 100 A continuous drain current and 161 A pulsed rating handle inrush transients during board insertion. The 80 V VDS rating tolerates the inductive kick of long backplane traces when the load is disconnected, and the low RDS(on) of 3.0 mΩ minimizes steady-state voltage drop across the MOSFET in the fully-enhanced ON state. Engineers wire it as a low-side switch driven by a hot-swap controller IC, with a 10 kΩ gate-source pulldown resistor to keep the device off during controller reset. The SuperSO8 5x6 mm footprint matches standard PowerPAK SO-8 land patterns, allowing direct PCB drop-in to upgrade legacy 30 V hot-swap designs to 48 V bus architectures.
Recommended
Battery Management Protection in 48V Lithium Packs
The BSC030N08NS5ATMA1 serves as the high-current protection MOSFET in 48 V lithium-ion battery packs for e-mobility, stationary storage, and light-electric-vehicle applications. Its 100 A continuous ID rating supports 5 kW-class discharge without paralleling, and the 80 V VDS comfortably exceeds the 54.6 V maximum charge voltage of 13S Li-ion packs with 30% transient margin. OptiMOS 5's low Qg and Qgd reduce drive losses in the BMS protection circuit, and the SuperSO8 5x6 mm footprint enables a compact dual-MOSFET back-to-back configuration for high-side and low-side disconnect. Engineers use a dedicated gate-driver IC to achieve sub-microsecond turn-off during overcurrent events.
Recommended
BLDC Motor Drive H-Bridge in Power Tools and Robotics
The BSC030N08NS5ATMA1 forms the low-side switches of a H-bridge driving 24 V to 48 V brushless DC motors in power tools, drones, and industrial robots, where its 100 A continuous ID handles peak motor currents during acceleration. The 3.0 mΩ RDS(on) at 10 V VGS keeps conduction loss low at high duty cycles, extending battery runtime in cordless applications, and the 80 V VDS tolerates the back-EMF spikes that occur when PWM-switching inductive loads. Designers typically pair two BSC030N08NS5 devices per phase with a gate driver that supports 1-2 MHz PWM; the SuperSO8 5x6 mm footprint allows two MOSFETs to fit beneath each phase on a 4-layer FR4 PCB. The OptiMOS 5 figure-of-merit enables 200 kHz+ PWM with minimal switching loss.
Recommended
Solar Inverter DC-DC Boost Stage (MPPT)
The BSC030N08NS5ATMA1 is well-suited to the boost-MPPT stage of residential and commercial solar inverters operating from 40 V to 60 V panel inputs. Its 80 V VDS absorbs the voltage overshoot of the boost inductor at switch turn-off, and the 100 A continuous current rating supports 3-5 kW converter power levels without paralleling. OptiMOS 5's 44% reduction in output capacitance versus prior generations reduces hard-switching loss at 50-100 kHz, enabling higher switching frequencies that shrink the inductor and output capacitor size by 30-40%. The SuperSO8 5x6 mm footprint is compatible with PowerPAK SO-8 land patterns, easing second-source qualification against onsemi and Vishay equivalents.
Recommended
High-Current USB-PD EPR Load Switch
The BSC030N08NS5ATMA1 enables a high-current load switch for USB Power Delivery Extended Power Range (EPR) sinks delivering 28 V / 36 V / 48 V at up to 100 W over USB-C. Its 80 V VDS easily handles the 48 V EPR voltage with 30% margin, while the 3.0 mΩ RDS(on) at 10 V VGS keeps the voltage drop below 150 mV at 5 A continuous load, preserving tight USB-PD voltage tolerance. The SuperSO8 5x6 mm footprint fits alongside USB-PD controllers and the BMC PHY on compact notebook and docking-station PCBs. Designers add a TVS diode for VBUS protection and a 100 kΩ gate-source pulldown to keep the switch off during firmware boot.
Recommended
Recommended Products Summary
Engineering reference data for BSC030N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC021N08NS5ATMA1 | BSC0504NSIATMA1 | BSC014N06NSATMA1 | BSC027N04LSGATMA1 | BSC039N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max (V) | 80 | 80 | 40 | 60 | 40 | 60 |
| RDS(on) max at VGS=10V (mOhm) | 3.0 | 2.1 | 0.65 (40V class) | 1.4 (60V class) | 2.7 (40V class) | 3.9 (60V class) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Optimized Application | Synchronous Rectification | Synchronous Rectification | Synchronous Rectification (low-voltage) | Synchronous Rectification (24V) | Synchronous Rectification (12V) | Synchronous Rectification (24V) |
Key Differentiators
- Lowest RDS(on) in 80V SuperSO8 OptiMOS 5 family at 3.0 mΩ (vs BSC021N08NS5ATMA1)
- 80V VDS provides 30% margin above 60V telecom transients (vs BSC014N06NSATMA1)
- 100 A continuous drain current in 5x6 mm SuperSO8 package (vs BSC027N04LSGATMA1)
Design Notes
Estimated: At ID=50 A and RDS(on)=3.0 mΩ, conduction loss P_cond = I² × RDS(on) = 50² × 0.003 = 7.5 W. On the Infineon 6 cm² copper reference PCB, theta_JA ≈ 50 °C/W (2.5 W Ta rating) to 1.8 °C/W (139 W Tc rating) depending on copper area. For continuous 50 A operation, design with at least 6 cm² of drain copper on top layer plus thermal vias to inner planes to keep junction rise below 50 °C. Above 70 A continuous, use multiple paralleled MOSFETs or forced-air cooling.
Layout is critical at multi-hundred-kHz switching. Use a 4-layer PCB with the top layer dedicated to drain copper, an inner full ground plane, and a bottom copper layer for source return. Keep the gate-drive loop area under 0.5 cm² by placing the gate IC directly adjacent to pin 4. Add a 10 Ω series gate resistor to damp the miller plateau oscillation, and place a 100 kΩ pulldown on pin 4 to prevent unintended turn-on during controller reset. The exposed pad must be soldered to drain copper with multiple thermal vias (12+ vias, 0.3 mm drill) for 139 W power dissipation.
In a half-bridge configuration, the high-side and low-side MOSFETs should be placed symmetrically around the inductor pad to minimize the high di/dt power loop. The BSC030N08NS5ATMA1's low-inductance SuperSO8 5x6 mm package helps limit voltage overshoot; pair it with a 100 V TVS clamp (e.g., SMBJ series) on the switch node for additional margin during load transients. For multi-MHz operation, add a 1 nF ceramic bypass capacitor (X7R, 100 V) directly across the device's drain-source terminals to damp ringing.
Do not exceed VGS=±20 V even transiently; the gate oxide is thin to minimize Qg. Always include a 100 kΩ gate-source pulldown resistor to prevent floating-gate turn-on during controller start-up. When substituting from the 60 V class (BSC014N06NSATMA1) to 80 V (this part), verify the bus voltage stays below 80 V including transients; the extra margin is valuable for 48 V telecom but unneeded in 24 V industrial. Finally, observe the drain-to-source body diode reverse recovery in synchronous rectification applications - OptiMOS 5 has a soft recovery but the controller's dead-time should still be minimized.
Compliance Information
Commercial-grade OptiMOS 5 part; not AEC-Q100 qualified - choose IAUC60N04S6L039ATMA1 or IAUZ30N06S5L140ATMA1 for automotive applications. RoHS and REACH compliant per Infineon product page. Halogen-free and lead-free per MSL-1 JEDEC J-STD-020 rating.
