BSC040N10NS5ATMA1 vs IPB017N10N5LFATMA1 Comparison
Detailed side-by-side comparison of BSC040N10NS5ATMA1 by Infineon and IPB017N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveInfineon
IPB017N10N5LFATMA1
IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N10NS5ATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.93 | $4.05 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) max | 136 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 139 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55C to +175C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Output Capacitance Reduction | Up to 44% vs previous generation | β |
| RDS(on) Reduction | Up to 43% vs previous generation | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 Linear FET |
| Continuous Drain Current (ID) @ TC=25C | β | 180 A |
| Continuous Drain Current (ID) @ TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | β | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | β | 1.7 mΞ© (max) |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Package / Case | β | PG-TO263-7 (D2PAK-7), surface mount |
| MSL Level | β | 1 (unlimited) |
| Avalanche Rated | β | Yes |
| Linear-Mode (SOA) Optimized | β | Yes (OptiMOS Linear FET) |