IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
MPN: IPB017N10N5LFATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.42 | $6.42 |
| 10 | $5.78 | $57.80 |
| 100 | $5.13 | $513.00 |
| 500 | $4.59 | $2,295.00 |
| 1,000 | $4.05 | $4,050.00 |
IPB017N10N5LFATMA1 Overview
An OptiMOS Linear FET is a specialized trench MOSFET engineered to operate in saturation for extended periods - useful in hot-swap, eFuse, inrush limiting, and battery-protection circuits where a standard MOSFET would otherwise enter thermal runaway. Within the broader taxonomy it sits as: MOSFET -> power MOSFET -> N-channel enhancement MOSFET -> linear FET, and the part family itself is Infineon's OptiMOS 5 Linear FET series.
Key features include a 1.7 mΩ maximum on-resistance at VGS = 10 V, ±20 V gate-source voltage rating, and avalanche-rated single-pulse capability. The wide SOA curve allows high current at moderate VDS without immediate failure, which is the defining characteristic of the Linear FET family versus standard OptiMOS 5 devices that are optimized purely for switching. The TO-263-7 (D2PAK) package provides a low thermal resistance path through the drain tab, simplifying heatsink attachment on the PCB.
Architecturally, Infineon uses an advanced trench cell design tuned for high transconductance and linear-region ruggedness, with a separate gate-oxide recipe that supports the high inrush currents typical of telecom and server OR-ing applications. The seven-lead PG-TO263-7 variant adds extra source pins (in addition to the tab) to lower source inductance and improve paralleling behavior.
Typical applications include 48 V telecom hot-swap controllers, server OR-ing and battery backup units, eMobility DC-link discharge circuits, and industrial programmable logic controllers (PLCs) requiring robust electronic circuit protection. When designing with the part, derate continuously using the SOA graph at the target case temperature and ensure the gate drive stays within ±20 V; use a TVS or gate-source resistor for protection against dv/dt-induced turn-on.
Drop-in alternatives for IPB017N10N5LFATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB017N10N5LFATMA1 (same form factor and footprint) — differing in Technology, Operating Temperature Range, Package, Product Family, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB017N10N5LF
✅ Drop-In📋 Reference alternative (not in catalog)
IPB025N10N5LFATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB033N10N5LFATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB025N10N3GATMA1
✅ Drop-In✓ In Stock
$3.74 / Unit
View Datasheet →BSC027N04LSGATMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →IPB017N10N5LFATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 Linear FET |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Operating Temperature Range | -55C to +175C (junction) |
| Package / Case | PG-TO263-7 (D2PAK-7), surface mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
| Avalanche Rated | Yes |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) |
IPB017N10N5LFATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | SOURCE — Source connection (parallel source pin) |
| Pin 3 | SOURCE — Source connection (parallel source pin) |
| Pin 4 | SOURCE — Source connection (parallel source pin) |
| Pin 5 | SOURCE — Source connection (parallel source pin) |
| Pin 6 | SOURCE — Source connection (parallel source pin) |
| Pin 7 | SOURCE — Source connection |
| Pin TAB | DRAIN — Drain connection and thermal pad (exposed metal tab) |
Safe Operating Area (Linear FET)
Typical Applications
IPB017N10N5LFATMA1 is suitable for 6 applications: 48V Telecom Hot-Swap Controller, Server OR-ing and Redundant Power Supply, Industrial PLC Electronic Circuit Protection, eMobility DC-Link Discharge Circuit, Battery Management System Protection FET, Solar Inverter Input Hot-Swap.
48V Telecom Hot-Swap Controller
The IPB017N10N5LFATMA1 fits 48V telecom hot-swap controllers because its 100V VDS comfortably covers the 48V nominal rail plus transient headroom, while its widened SOA absorbs the inrush energy when bulk input capacitors charge. The 1.7 mΩ RDS(on) at VGS=10V keeps continuous conduction loss low after the card is fully inserted, and the PG-TO263-7 drain tab provides a low-thermal-resistance path to a PCB copper spreader. Unlike a standard switching MOSFET that would thermally run away during linear-mode inrush limiting, this Linear FET is engineered to sustain high VDS × ID product for milliseconds without failure, per the Infineon OptiMOS 5 Linear FET SOA curves. The ±20V VGS rating and avalanche-rated single-pulse capability further harden the design against abnormal transients on live bus insertion.
Recommended
Server OR-ing and Redundant Power Supply
In redundant server power supplies and 48V battery-backup units, the IPB017N10N5LFATMA1 serves as an OR-ing FET that prevents reverse-current flow between paralleled supplies. Its 1.7 mΩ RDS(on) at full VGS=10V drive drops only ~170 mW at 10A of continuous load, minimizing heat in tightly packed 1U/2U server chassis. The OptiMOS 5 Linear FET SOA is engineered to absorb the brief reverse-current spike that occurs when one supply fails before the other, a transient that often destroys standard MOSFETs. The PG-TO263-7 surface-mount footprint enables automated SMT assembly, and the 7-pin layout reduces source inductance for cleaner gate drive during fast OR-ing transitions.
Recommended
Industrial PLC Electronic Circuit Protection
The IPB017N10N5LFATMA1 is used as the protection/eFuse element in industrial PLC digital-output modules where sustained over-current or short-circuit conditions require the FET to operate in linear mode for milliseconds to tens of milliseconds before the controller trips. Its 100V VDS rating easily covers 24V and 48V industrial bus transients, and the 313W TC=25C power dissipation envelope accommodates repetitive fault clearing without device degradation. The PG-TO263-7 footprint with exposed drain tab attaches directly to a copper pour for heatsinking in DIN-rail enclosures where ambient temperature can reach 70°C. The wide SOA also enables single-FET designs that would otherwise require paralleling or active cooling, reducing BOM cost in volume PLC designs.
Recommended
eMobility DC-Link Discharge Circuit
In eMobility traction inverters and onboard chargers, the IPB017N10N5LFATMA1 is well-suited for active DC-link discharge circuits that must safely dissipate stored capacitor energy after the high-voltage bus is disconnected. The 100V VDS rating covers typical 48V mild-hybrid and 60-80V e-bus systems, and the wide SOA allows it to absorb the discharge energy as heat without secondary breakdown, a critical safety function. The 1.7 mΩ RDS(on) minimizes losses during normal operation when the part is fully enhanced, and the surface-mount PG-TO263-7 package supports automated production. The ±20V gate rating and avalanche capability provide additional design margin against automotive load-dump and jump-start transients specified in LV124 / ISO 7637-2.
Recommended
Battery Management System Protection FET
The IPB017N10N5LFATMA1 is commonly selected as the high-side or low-side protection MOSFET in multi-cell lithium-ion battery management systems where the FET must isolate the pack during over-current or short-circuit events. Its 100V VDS covers 12-48V battery stacks with margin, and the widened SOA allows sustained linear-mode current limiting during cell balancing or pre-charge phases that would destroy conventional switching MOSFETs. The 1.7 mΩ RDS(on) keeps voltage drop and conduction loss low during normal charge/discharge, extending usable battery capacity. The PG-TO263-7 surface-mount package simplifies PCB layout and supports the high-current copper pours typical of BMS designs, while the 175°C maximum junction temperature provides thermal headroom for fault conditions.
Recommended
Solar Inverter Input Hot-Swap
The IPB017N10N5LFATMA1 serves as the input hot-swap FET in string solar inverters where PV panel capacitance and DC-bus bulk capacitance can draw destructive inrush currents during inverter startup. Its 100V VDS covers typical 48V and 60V PV string configurations, and its widened OptiMOS 5 Linear FET SOA allows controlled inrush charging without the thermal stress that would damage a standard switching MOSFET. The 1.7 mΩ RDS(on) at full VGS=10V gate drive keeps steady-state conduction loss minimal, an important consideration for solar systems where every percentage point of efficiency translates to annual energy yield. The PG-TO263-7 surface-mount package with exposed drain tab enables direct attachment to a PCB copper heatsink suitable for outdoor IP65-rated inverter enclosures.
Recommended
Recommended Products Summary
Engineering reference data for IPB017N10N5LFATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB017N10N5LF | IPB025N10N5LFATMA1 | IPB033N10N5LFATMA1 | IPB025N10N3GATMA1 | BSC027N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same |
| VDS Max (V) | 100 | 100 | 100 | 100 | 100 | 40 |
| RDS(on) Max @ VGS=10V (mΩ) | 1.7 | 1.7 | 2.5 | 3.3 | 2.5 | 2.7 |
| Continuous Drain Current @ TC=25C (A) | 180 | 180 | 140 | 120 | 160 | 100 |
| Linear FET (Wide SOA) | Yes (OptiMOS 5 Linear FET) | Yes | Yes | Yes | No (standard switching OptiMOS 3) | No (standard switching) |
| Technology Family | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 3 | OptiMOS 3 |
Key Differentiators
- Wide Safe Operating Area for linear-mode operation (vs IPB025N10N3GATMA1)
- Lower RDS(on) in the same PG-TO263-7 footprint (vs IPB025N10N5LFATMA1)
- Same PG-TO263-7 footprint as 40V standard MOSFET alternatives (vs BSC027N04LSGATMA1)
Design Notes
Estimated: at 100A continuous with VGS=10V and the tab mounted on 1 oz copper with thermal vias to a 25x25mm inner-plane spreader, the junction-to-ambient thermal resistance is approximately 35 C/W, yielding a 35°C rise at 100A. Linear-mode fault clearing at high VDS×ID can push junction temperatures toward the 175°C maximum - always consult the SOA graph at your actual TC and pulse duration. For continuous loads above 80A, an external aluminum heatsink attached to the drain tab is recommended.
The PG-TO263-7 drain tab must be soldered to a copper pad of at least 50x40mm with an array of thermal vias (0.3mm drill, 0.6mm pitch) connecting to the opposite-side copper plane to achieve the rated thermal performance. Use a stencil aperture of 1:1 to the tab pad with no reduction to ensure proper void-free solder joint. The 7 source pins should be tied together on the PCB with a wide copper pour to minimize parasitic source inductance, which is critical for clean gate-drive waveforms in fast-switching applications.
Do not drive the gate above ±20V even momentarily - exceeding this rating will damage the gate oxide. For 12V gate drive designs, add a 10kΩ gate-source resistor to ensure the FET stays off during supply transients. In linear-mode hot-swap circuits, never exceed the SOA curve at the worst-case TC and pulse duration; the Linear FET is more robust than standard MOSFETs but still has finite linear-mode energy capability. Always include a TVS diode across drain-source for inductive load applications.
Keep the gate-drive loop area minimal by routing the gate trace directly over a ground plane and placing the gate driver within 10mm of the gate pin. The high-di/dt drain current loop (input cap → drain → source → input cap) should also be minimized to reduce voltage spikes and EMI. Use wide copper pours (≥2mm per ampere) for source and drain connections to handle the 180A continuous current without significant IR drop or heating of the PCB traces.
Compliance Information
RoHS and REACH compliant per Infineon product page; AEC-Q100 not specifically qualified but used in many automotive designs; halogen-free status not explicitly stated in verified data and should be confirmed via the Infineon material declaration.
