BSC047N08NS3GATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC047N08NS3GATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC047N08NS3GATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.78
Manufacturer Infineon Technologies β€”
Part Number BSC047N08NS3GATMA1 β€”
Technology OptiMOSβ„’ 3 (N-channel trench) β€”
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Continuous Drain Current (ID) at Ta 18 A β€”
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V β€”
Power Dissition (Tc) 125 W β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) β€”
Avalanche Rated 100% tested Yes (100% avalanche tested)
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (Tj) -55C to +150C (Tj)
RoHS / Halogen-Free RoHS compliant, Halogen-free β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21

Datasheets & Resources

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