BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon
MPN: BSC047N08NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.94 | $0.94 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.46 | $2,300.00 |
BSC047N08NS3GATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and amplify signals in power electronics. The N-channel enhancement mode variant conducts when a positive gate-source voltage is applied. Within the broader taxonomy, this part sits at: power MOSFET → discrete semiconductor → transistor → electronic component. MOSFETs are the workhorse of modern switch-mode power supplies (SMPS), motor drives, and battery protection circuits, where their low on-resistance and fast switching translate directly into higher system efficiency and smaller magnetics.
Key features of the BSC047N08NS3GATMA1 include a typical RDS(on) of 4.7 mOhm at VGS=10 V, superior thermal resistance thanks to the exposed SuperSO8 pad, normal-level gate threshold for standard logic drive, 100% avalanche tested ruggedness, and Pb-free plating that is RoHS compliant plus halogen-free per JEDEC qualification. The SuperSO8 outline is pin-compatible with industry-standard SO-8 power packages, enabling drop-in upgrades in legacy boards.
Architecturally, the OptiMOS™ 3 generation uses a trench-gate cell design that shrinks the channel length and increases cell density, dropping RDS(on) by roughly 30% compared with the prior OptiMOS™ 2 generation at the same die size. The intrinsic body diode is characterized for synchronous-rectifier duty, so the part can replace external Schottky diodes in many buck and forward converter topologies. Gate charge is balanced against output capacitance to keep switching losses low at 300 kHz to 1 MHz operation.
Typical applications include high-frequency DC/DC converters in server and telecom SMPS, synchronous rectification in isolated DC/DC bricks, solar micro-inverter power stages, and 48 V eMobility / mild-hybrid accessory rails. The combination of 80 V rating and 100 A current capability also makes it suitable for hot-swap controllers, OR-ing FETs, and battery management protection MOSFETs in multicell Li-ion packs. In each case the low FOM directly improves light-load and full-load efficiency.
When designing with this MOSFET, ensure the gate driver can supply and sink the gate charge within the target switching frequency. A 10 Ohm gate resistor is usually sufficient to damp ringing; thermal layout must include at least 6 cm² of drain copper on a 40 x 40 x 1.5 mm FR4 board to reach the datasheet 125 W Tc rating. Always observe the maximum junction temperature of 175 °C and apply appropriate derating for ambient operation above 25 °C.
This page synthesizes distributor pricing from DigiKey and Mouser, parametric comparisons versus cross-brand drop-in equivalents in the same SuperSO8 footprint, and practical design notes not consolidated in the manufacturer datasheet, providing engineers with a single reference for selection, sourcing, and board-level implementation.
Drop-in alternatives for BSC047N08NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC047N08NS3GATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC047N08NS3 G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC060N10NS3GATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC022N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →BSC076N06NS3GATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →NTMFS6H848N
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA52DP
✅ Drop-In📋 Reference alternative (not in catalog)
BSC047N08NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 |
| Technology | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) max | 80 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Continuous Drain Current (ID) at Ta | 18 A |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | 125 W |
| Power Dissipation (Ta) | 2.5 W |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) |
| Avalanche Rated | 100% tested |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free |
BSC047N08NS3GATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source connection (low-side return path) |
| Pin 3 | Source — Source connection (parallel with pin 2 for low R_DS(on)) |
| Pin 4 | Source — Source connection (gate return, kelvin sense) |
| Pin 5 | Drain — Drain connection (internally shorted to pin 6-8 and exposed pad) |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
BSC047N08NS3GATMA1 is suitable for 7 applications: 48 V Server / Telecom DC-DC Converter, Solar Micro-Inverter Power Stage, Hot-Swap / OR-ing FET in 48 V Distribution, Brushless DC Motor Drive (Automotive Auxiliary), Synchronous Rectification in Isolated DC-DC Brick, Battery Management Protection FET (Multi-Cell Li-ion), Telecom 48 V POL (Point-of-Load) Module.
48 V Server / Telecom DC-DC Converter
The BSC047N08NS3GATMA1 is a strong fit as the synchronous rectifier (low-side FET) in 48 V-input isolated and non-isolated DC/DC bricks used in hyperscale servers and telecom rectifiers. Its 80 V VDS rating gives 25 V of headroom above a 48 V nominal bus, comfortably absorbing transients on hot-swap insertion. The 4.7 mOhm RDS(on) keeps conduction loss under 1 % at 30 A output, while the OptiMOS™ 3 FOM enables 300 kHz to 1 MHz switching with acceptable switching loss. Designers typically pair it with a digital controller such as the XAIPART-sourced IPD90N06S407ATMA2 for the primary-side switch. The SuperSO8 5x6 footprint simplifies two-side cooling layouts in 1U and 2U power shelves.
Recommended
Solar Micro-Inverter Power Stage
For solar micro-inverter power stages running off a 40 V - 60 V PV bus, the BSC047N08NS3GATMA1 delivers the combination of 80 V VDS rating, 4.7 mOhm RDS(on), and SuperSO8 thermal performance required for high-frequency hard-switching. The exposed drain pad dissipates up to 125 W with proper copper, removing the need for an active heatsink at 50 kHz switching and 25 A RMS operation. Compared to a 100 V part, the BSC047N08NS3GATMA1 saves roughly 20 % conduction loss, directly improving CEC-weighted inverter efficiency. Gate drive from a TI UCC27714 or equivalent half-bridge driver matches the part's normal-level VGS(th) cleanly. The result is a compact, single-board micro-inverter module.
Recommended
Hot-Swap / OR-ing FET in 48 V Distribution
The BSC047N08NS3GATMA1 is widely used as a Hot-Swap or OR-ing MOSFET in 48 V power-distribution backplanes, where it controls inrush current and isolates redundant feeds. Its 80 V VDS rating and 100 A continuous ID support the full 48 V bus plus transients during plug-in events. The 4.7 mOhm RDS(on) minimizes steady-state voltage drop across the OR-ing FET - critical for high-current feeds where even 10 mOhm of extra resistance translates into watts of loss. The part's 100 % avalanche rating handles the inductive kick from hot-plug events gracefully, and the SuperSO8 footprint is the same as industry-standard SO-8 power packages, easing layout migration from legacy designs.
Recommended
Brushless DC Motor Drive (Automotive Auxiliary)
For 12 V - 48 V BLDC motor drives used in automotive auxiliaries such as electric power steering, water pumps, and cooling fans, the BSC047N08NS3GATMA1 acts as the low-side or three-phase bridge FET. The 80 V VDS rating tolerates the inductive spike when the MOSFET switches off the motor winding. Its 4.7 mOhm RDS(on) reduces conduction loss across the bridge, while the SuperSO8 package supports PCB-side cooling in the cramped ECU environment. The part is qualified to JEDEC standards for industrial and automotive-grade applications, providing the reliability margin that 12 V - 48 V body-electronics designs demand.
Recommended
Synchronous Rectification in Isolated DC-DC Brick
In isolated half-bridge and full-bridge DC/DC bricks (12 V - 48 V output telecom bricks), the BSC047N08NS3GATMA1 serves as the synchronous rectifier on the secondary side, replacing Schottky diodes to gain 1 % - 3 % efficiency. Its body diode is characterized for synchronous-rectifier duty, so no external clamp is needed. The low gate charge of the OptiMOS™ 3 die keeps the synchronous FET from lagging the primary switch at 200 kHz - 500 kHz, and the 4.7 mOhm RDS(on) supports 30 A - 50 A output rails at 25 - 40 W per device. Designers typically use two BSC047N08NS3GATMA1 in parallel for 100 A bricks.
Recommended
Battery Management Protection FET (Multi-Cell Li-ion)
For battery management systems (BMS) on multi-cell Li-ion packs up to 12S (50.4 V max), the BSC047N08NS3GATMA1 can be used as the charge / discharge protection MOSFET on the high-current path. Its 80 V VDS rating exceeds the 12S pack voltage with margin, and its 100 A ID handles continuous discharge of mid-power e-mobility packs. The 4.7 mOhm RDS(on) keeps the IR drop small across the protection FET, preserving battery runtime. The SuperSO8 5x6 footprint is much smaller than a D2PAK alternative, enabling compact BMS boards for power tools, e-bikes, and small EV auxiliaries.
Recommended
Telecom 48 V POL (Point-of-Load) Module
For 48 V-input point-of-load (POL) modules delivering 1 V - 12 V at 20 A - 50 A to ASICs and FPGAs, the BSC047N08NS3GATMA1 functions as the high-side FET in a buck or buck-derived topology. The 80 V VDS rating absorbs 48 V bus transients and ringing without avalanching, and the 4.7 mOhm RDS(on) keeps the high-side conduction loss manageable at high duty cycle. The OptiMOS™ 3 FOM reduces the high-side switching loss to under 1 % at 500 kHz, supporting high-density POL modules where efficiency at light load (10 % - 30 %) is the dominant design constraint for telecom ASICs.
Recommended
Recommended Products Summary
Engineering reference data for BSC047N08NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC047N08NS3 G | BSC060N10NS3GATMA1 | BSC022N04LS6ATMA1 | BSC076N06NS3GATMA1 | NTMFS6H848N | SiRA52DP |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) | SO-8FL (5x6 mm) | PowerPAK SO-8 (5x6 mm) |
| VDS max | 80 V | 80 V | 100 V | 40 V | 60 V | 80 V | 80 V |
| RDS(on) max | 4.7 mOhm | 4.7 mOhm | 6.0 mOhm | 2.2 mOhm | 7.6 mOhm | 5.0 mOhm | 5.0 mOhm |
| Technology | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS™ 5 | OptiMOS™ 3 | Onsemi shield-gate trench | Vishay TrenchFET Gen IV |
| Avalanche Rated | Yes (100%) | Yes (100%) | Yes (100%) | Yes (100%) | Yes (100%) | Yes | Yes |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lowest RDS(on) in Infineon 80 V SuperSO8 family (vs BSC076N06NS3GATMA1 (60 V))
- 80 V VDS gives 67 % margin on 48 V telecom bus (vs BSC060N10NS3GATMA1 (100 V))
- Cross-brand 80 V drop-in alternative available (vs NTMFS6H848N (onsemi))
- OptiMOS™ 3 trench technology with optimized FOM (vs SiRA52DP (Vishay))
Design Notes
The BSC047N08NS3GATMA1 is rated for 125 W at Tc=25 °C, but this requires the exposed drain pad to be soldered to a copper pour of at least 6 cm² on a 40 x 40 x 1.5 mm FR4 board (one layer, 70 °m copper). On a 4-layer board with 2 oz inner copper and 1 oz outer copper, the thermal resistance theta_JA drops to roughly 40 °C/W, allowing 8 W - 10 W continuous dissipation without a heatsink. For higher dissipation, add a top-side copper pour or thermal vias to an inner copper plane.
Use a star-grounded Kelvin source connection: tie pin 4 (Source) directly to the gate-driver ground return rather than to the power ground. This isolates the gate-drive loop from the high-current source path and prevents the source inductance from ringing the gate during turn-off. Place the gate resistor (typically 4.7 × to 10 ×) within 5 mm of pin 1, and use a 100 kΩ pull-down on the gate to ensure the MOSFET stays off during power-up.
Do not exceed the datasheet SOA curve: at 80 V VDS the DC current is limited to under 6 A continuously, while at 40 V it rises to 25 A. Exceeding SOA reduces avalanche ruggedness and shortens lifetime even if Tj stays below 175 °C. For switching applications, use the pulse curves (100 ms or single pulse) for sizing. Also verify that the gate-driver supply stays within the 4.5 V - 10 V VGS range - the part is normal-level only and will not turn on at 3.3 V logic drive.
Keep the power loop (input cap, high-side FET, low-side FET, return) under 5 nH total inductance to limit the turn-off voltage spike below the 80 V VDS rating. Use 2 oz copper on top and bottom layers for the power loop, and place the input ceramic capacitor (1 µF - 4.7 µF X7R) within 2 mm of the drain-source terminals. For synchronous-rectifier duty, add a small RC snubber (10 Ω + 1 nF) across the FET to damp ringing at the switching node.
Compliance Information
Per Infineon datasheet: Pb-free plating, RoHS compliant (2011/65/EU), halogen-free per JEDEC JS709B, JEDEC-qualified for target applications. Industrial grade - not AEC-Q100 qualified; see automotive-grade equivalents for AEC-Q100.
