BSC0501NSIATMA1 vs BSC155N06NDATMA1 Comparison
Detailed side-by-side comparison of BSC0501NSIATMA1 by Infineon and BSC155N06NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β Active
Specification Comparison
| Parameter | BSC0501NSIATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.62 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 50 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Avalanche Rated | Yes | β |
| Technology | Trench-gate OptiMOS 5 | OptiMOS 3 (N-channel trench) |
| Part Number | β | BSC155N06NDATMA1 |
| Configuration | β | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | β | 15.5 mOhm |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | β | -55 C to +175 C |
| Power Dissipation (Tc=25C) | β | 50 W |
| Lead-Free Plating | β | Yes |
| Shoot-Through Immunity Qgd/Qgs | β | < 0.8 |