BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon
MPN: BSC155N06NDATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.36 | $1.36 |
| 10 | $1.22 | $12.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.81 | $405.00 |
| 1,000 | $0.67 | $670.00 |
| 2,000 | $0.62 | $1,240.00 |
BSC155N06NDATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. As a member of the power management hierarchy, it sits beneath DC-DC converters, voltage regulators, and motor drivers. The 'N-channel' designation means conduction occurs via electrons, which yields lower on-resistance per unit silicon area than P-channel equivalents. The 'dual' configuration integrates two independent MOSFET dies in one thermally efficient package, simplifying half-bridge, synchronous-rectifier, and full-bridge topologies by halving board area and parasitic inductance.
Key features include a 60 V VDS breakdown rating suitable for 12 V and 24 V bus systems, 15.5 mOhm maximum RDS(on) at VGS=10 V, low Qgd/Qgs ratio below 0.8 for high shoot-through immunity in half-bridge topologies, and operation up to 175 C junction temperature. The PG-TDSON-8 SuperSO8 package provides superior thermal resistance compared to standard SO-8, enabling higher continuous current without external heatsinking.
The architecture leverages OptiMOS 3 trench cell design to minimize both conduction and switching losses. With low figure-of-merit (RDS(on) x Qg), this part is optimized for high-frequency synchronous rectification in switched-mode power supplies, where reduced switching loss directly improves system efficiency at elevated switching frequencies of 200 kHz to 1 MHz.
Typical applications include synchronous rectification in 12 V isolated DC-DC converters, motor drive half-bridges in battery-powered tools, class-D audio amplifier output stages, and OR-ing FET configurations in redundant power systems. The dual co-packaged design is particularly valuable where PCB real estate is constrained.
When designing with this device, ensure gate-drive voltage reaches at least 10 V for full enhancement, and keep the high-current loop area minimal to control switching transients. The exposed pad must be soldered to a sufficiently large copper pour (typically 1 square inch minimum) for thermal dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet, providing engineering context for component selection and supply-chain decisions.
Drop-in alternatives for BSC155N06NDATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC155N06NDATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0901NSIATMA1
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View Datasheet →BSC016N04LSATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC014N04LSATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC0501NSIATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →BSC027N10NS5ATMA1
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View Datasheet →BSC0993NDATMA1
✅ Drop-In✓ In Stock
$1.32 / Unit
View Datasheet →BSC155N06NDATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC155N06NDATMA1 |
| Technology | OptiMOS 3 (N-channel trench) |
| Configuration | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W |
| MSL Level | 1 |
| RoHS Status | Compliant (Pb-free plating) |
| Lead-Free Plating | Yes |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 |
BSC155N06NDATMA1 Pin Configuration
| Pin 1 | S1 — Source of MOSFET 1 (low-side) |
| Pin 2 | G1 — Gate of MOSFET 1 |
| Pin 3 | S2 — Source of MOSFET 2 (low-side) |
| Pin 4 | G2 — Gate of MOSFET 2 |
| Pin 5 | D2 — Drain of MOSFET 2 (high-side) |
| Pin 6 | D2 — Drain of MOSFET 2 (high-side, continued) |
| Pin 7 | D1 — Drain of MOSFET 1 (high-side) |
| Pin 8 | D1 — Drain of MOSFET 1 (high-side, continued) |
Typical Applications
BSC155N06NDATMA1 is suitable for 6 applications: Synchronous Rectification in 24V DC-DC Converters, Motor Drive Half-Bridges in Battery-Powered Tools, Class-D Audio Amplifier Output Stage, OR-ing FET Configuration in Redundant Power Systems, Industrial 24V Bus Switching and Load Management, Automotive 12V eFuse and Solid-State Relay.
Synchronous Rectification in 24V DC-DC Converters
The BSC155N06NDATMA1 fits 24 V bus synchronous rectification because its 60 V VDS breakdown voltage provides ample margin above the 24 V nominal plus transient spikes (load-dump up to 35 V in automotive), while its 15.5 mOhm maximum RDS(on) at VGS=10 V minimizes conduction loss during the freewheeling phase. The dual N-channel co-packaged design reduces the high-current loop area between the high-side and low-side FETs, cutting parasitic inductance that would otherwise generate voltage overshoot during commutation. Placed on the secondary side of an isolated DC-DC converter (e.g., between the synchronous rectifier node and the 12 V or 5 V output), this part replaces two discrete SO-8 MOSFETs and improves thermal coupling. The OptiMOS 3 trench technology delivers a low figure-of-merit that maintains efficiency at switching frequencies of 200 kHz to 1 MHz, where the part can be benchmarked against the BSC0901NSIATMA1 and BSC0501NSIATMA1 in the same package.
Recommended
Motor Drive Half-Bridges in Battery-Powered Tools
In cordless drill and impact-driver half-bridge stages, the BSC155N06NDATMA1's dual co-packaged configuration implements one leg of an H-bridge driver, with the high-side and low-side N-channel switches sharing a single SuperSO8 5x6 mm thermal pad. The 60 V VDS rating covers the back-EMF of 18 V to 20 V battery packs during braking, while 20 A continuous drain current meets the peak torque demand of brushless DC motors. Its 175 C maximum junction temperature tolerates the high ambient temperatures inside sealed tool housings. Designers should note the Qgd/Qgs ratio below 0.8 provides shoot-through immunity that simplifies dead-time tuning, a critical factor in PWM-driven motor control where cross-conduction can destroy the FETs in microseconds.
Recommended
Class-D Audio Amplifier Output Stage
The BSC155N06NDATMA1 serves as the output power stage in class-D audio amplifiers where its 60 V VDS supports +/- 25 V supply rails typical of 100 W to 200 W automotive and home-audio amplifiers. The 15.5 mOhm RDS(on) reduces output-stage conduction loss, directly improving amplifier efficiency (typically 90%+ versus 50% for class-AB), which reduces heatsink requirements and extends portable-speaker battery life. Its dual-die packaging ensures matched RDS(on) between the P-channel-replacement N-channel pairs (used in BTL configuration), preventing DC offset at the speaker output that would otherwise cause voice-coil damage. The part's fast switching capability (low Qg) is essential for reproducing audio without distortion at the 250 kHz to 500 kHz typical PWM carrier frequencies.
Recommended
OR-ing FET Configuration in Redundant Power Systems
In server and telecom redundant 12 V or 24 V power architectures, the BSC155N06NDATMA1 implements the OR-ing FET function that isolates a failing power supply from the shared DC bus, preventing back-feeding that would otherwise cause system-wide downtime. The dual-die package is ideal for OR-ing two independent power sources in parallel to a common load, where each FET must block full bus voltage during fault conditions (60 V rating covers 24 V nominal). Its 15.5 mOhm RDS(on) adds only ~0.78 W of dissipation at 5 A load per channel, compared to a Schottky diode solution that would dissipate ~5 W. The part's fast body-diode recovery supports hot-swap insertion of power modules without bus disturbance.
Recommended
Industrial 24V Bus Switching and Load Management
The BSC155N06NDATMA1 handles high-side load switching in industrial PLC and industrial-IoT applications where 24 V DC bus switching controls solenoids, relays, motor contactors, and heating elements. The 60 V VDS rating provides headroom for 24 V industrial bus transients (per IEC 61131-2 surge testing), and the dual-die package can drive two independent loads from one IC. The exposed SuperSO8 thermal pad supports continuous operation at high ambient factory temperatures (up to 85 C), where the 175 C junction rating leaves ample thermal margin. Engineers should size the gate-drive resistor to limit dV/dt-induced turn-on, especially when driving inductive loads, and pair this FET with a TVS diode for transient voltage clamping beyond 60 V.
Recommended
Automotive 12V eFuse and Solid-State Relay
In automotive 12 V electrical systems the BSC155N06NDATMA1 serves as the switching element in solid-state relays (SSR) and electronic fuses (eFuse) that replace traditional mechanical relays and fuses. The 60 V VDS rating handles 12 V load-dump transients up to 35 V (per ISO 7637-2), and the dual co-packaged design implements both the main switch and a reverse-polarity protection FET in one footprint. The 20 A continuous current suits headlight, fan, and seat-heater switching. Note that for AEC-Q100/AEC-Q101 qualified automotive variants, designers should verify the specific automotive-grade part number with Infineon rather than the standard BSC155N06NDATMA1.
Recommended
Recommended Products Summary
Engineering reference data for BSC155N06NDATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSIATMA1 | BSC016N04LSATMA1 | BSC0501NSIATMA1 | BSC0993NDATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Drain-to-Source Voltage (VDS) | 60 V | 100 V | 40 V | 60 V | 60 V |
| Technology Generation | OptiMOS 3 (60V) | OptiMOS (100V) | OptiMOS (40V) | OptiMOS (60V) | OptiMOS 3 (60V) |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS / Lead-Free | Yes / Pb-free plating | Yes / Pb-free | Yes / Pb-free | Yes / Pb-free | Yes / Pb-free |
Key Differentiators
- OptiMOS 3 60V generation with low 15.5 mOhm RDS(on) (vs BSC0901NSIATMA1)
- Dual co-packaged N-channel in single SuperSO8 (vs Discrete single-MOSFET solutions (e.g., IRF540NSTRLPBF))
- Qgd/Qgs ratio below 0.8 for high shoot-through immunity (vs BSC014N04LSATMA1 (40V class))
Design Notes
Estimated: At maximum rated conditions of 50 W power dissipation at Tc=25C, the junction-to-case thermal resistance of the PG-TDSON-8 SuperSO8 package allows reliable operation only when the exposed thermal pad is soldered to a copper pour of at least 25 mm x 25 mm on a 2 oz copper PCB. Without sufficient copper heatsinking, continuous drain current must be derated to ~5 A at 85C ambient to keep junction temperature below 150C (75% of the 175C maximum). Engineers should always verify thermal performance with a thermal-coupon measurement on the actual PCB stack-up.
Place the gate-drive resistors (typically 10 Ohm to 100 Ohm) as close as possible to the gate pins (pins 2 and 4) to minimize parasitic inductance that causes gate ringing and possible shoot-through. The exposed thermal pad must be soldered using a via array (typically 9 to 16 thermal vias, 0.3 mm diameter) to inner-layer copper planes. Source pins (1 and 3) should connect to a low-impedance ground/power-return plane, since source inductance directly subtracts from the gate-drive voltage (VGS = Vgate_drive - Ls x di/dt).
Do not exceed VGS of +/-20 V absolute maximum, even though typical gate drive is 10 V. Body-diode reverse recovery (Qrr) in synchronous rectifier topologies can cause cross-conduction if dead-time is not carefully tuned - the Qgd/Qgs ratio below 0.8 helps but does not eliminate this risk. For half-bridge configurations, add a small RC snubber (typically 10 Ohm + 1 nF) across the drain-source of each FET to damp ringing caused by parasitic inductance. Avoid placing the FETs in series for higher VDS - use a single higher-voltage part instead, since dynamic VDS sharing is unreliable.
Compliance Information
RoHS compliant with Pb-free plating per Infineon product page. The standard BSC155N06NDATMA1 part is not AEC-Q100 qualified; for automotive designs requiring AEC-Q101, source the explicitly automotive-graded Infineon variant in the same family. Halogen-free status not explicitly stated in the verified web data.
