BSC0504NSIATMA1 vs BSC011N03LSIATMA1 Comparison
Detailed side-by-side comparison of BSC0504NSIATMA1 by Infineon and BSC011N03LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΞ© Power MOSFET | Infineon
BSC011N03LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC0504NSIATMA1 | BSC011N03LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $1.32 |
| Transistor Type | N-channel MOSFET | β |
| Drain-to-Source Voltage | 30 V | β |
| Continuous Drain Current at Ta | 21 A | β |
| Continuous Drain Current at Tc | 72 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Technology Family | OptiMOS 5 | β |
| Package | PG-TDSON-8-6 | PG-TDSON-8-7 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 pins | β |
| Exposed Pad | Yes, according to distributor package description | β |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | β |
| Gate Charge | [DATA_NEEDED: gate charge] | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage] | β |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | β |
| RoHS Status | unknown | Compliant |
| Lead-Free Status | unknown | β |
| Halogen-Free Status | unknown | β |
| REACH Status | unknown | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ 30 V |
| Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 37 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM value] |
| On-State Resistance RDS(on) at VGS=10V | β | 1.1 mΞ© (typical) |
| Power Dissipation at TA=25Β°C | β | 2.5 W |
| Power Dissipation at TC=25Β°C | β | 96 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |