BSC0504NSIATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC0504NSIATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0504NSIATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.54 |
| Transistor Type | N-channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage | 30 V | β |
| Continuous Drain Current at Ta | 21 A | β |
| Continuous Drain Current at Tc | 72 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Technology Family | OptiMOS 5 | β |
| Package | PG-TDSON-8-6 | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 pins | β |
| Exposed Pad | Yes, according to distributor package description | β |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | β |
| Gate Charge | [DATA_NEEDED: gate charge] | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage] | β |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55Β°C to +150Β°C |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | β |
| RoHS Status | unknown | Compliant |
| Lead-Free Status | unknown | β |
| Halogen-Free Status | unknown | β |
| REACH Status | unknown | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Technology | β | OptiMOS 3 (Trench) |
| MSL Level | β | 1 |
| Halogen-Free | β | Yes |