BSC0504NSIATMA1 vs IAUC60N04S6L039ATMA1 Comparison
Detailed side-by-side comparison of BSC0504NSIATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0504NSIATMA1
BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
BSC0504NSIATMA1 β ActiveInfineon
IAUC60N04S6L039ATMA1
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0504NSIATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.72 |
| Transistor Type | N-channel MOSFET | β |
| Drain-to-Source Voltage | 30 V | β |
| Continuous Drain Current at Ta | 21 A | β |
| Continuous Drain Current at Tc | 72 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Technology Family | OptiMOS 5 | β |
| Package | PG-TDSON-8-6 | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 pins | β |
| Exposed Pad | Yes, according to distributor package description | β |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | β |
| Gate Charge | [DATA_NEEDED: gate charge] | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage] | β |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | β |
| RoHS Status | unknown | Compliant |
| Lead-Free Status | unknown | β |
| Halogen-Free Status | unknown | β |
| REACH Status | unknown | β |
| FET Type | β | N-Channel |
| Technology | β | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | β | 60 A |
| Pulsed Drain Current (I_DM) | β | 240 A |
| R_DS(on) max @ V_GS=10V | β | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | β | 42 W |
| Operating Junction Temperature | β | -55C to +175C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Avalanche Rated | β | Yes (100% avalanche tested) |