IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
MPN: IAUC60N04S6L039ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.3 | $130.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.88 | $880.00 |
| 5,000 | $0.72 | $3,600.00 |
IAUC60N04S6L039ATMA1 Overview
OptiMOS 6 represents the sixth generation of Infineon's low-voltage power MOSFET platform, a refinement of trench-gate architectures that reduces both conduction and switching losses compared to earlier generations. The technology targets 12 V and 24 V automotive systems where efficiency, thermal behavior, and robustness are simultaneously critical. Within the broader power semiconductor hierarchy, this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> automotive-grade power switch. Compared with classic planar MOSFETs of the same voltage class, OptiMOS 6 delivers roughly 30 percent lower R_DS(on) per unit silicon area, which translates into cooler operation, smaller PCB real estate, and higher system-level power density.
Key features include 3.9 milliohm maximum R_DS(on) at V_GS = 10 V, a 60 A continuous drain rating (T_C = 25 C) and a 240 A pulsed drain current limit, low gate charge Q_G in the single-digit nC range for fast switching, and 100 percent avalanche-tested ruggedness. The package is qualified to MSL 1 and JEDEC J-STD-020 reflow profiles, and the die is characterized for an operating junction range of -55 C to +175 C. The leadless PG-TDSON-8 footprint also exposes a large source pad, which functions as the primary thermal path and supports high steady-state current without external heatsinking in well-designed copper pours.
Typical applications include 12 V automotive ECU power stages, body and chassis ECUs, reverse-polarity protection ORing switches, hot-swap and battery management disconnects, BLDC motor drives for pumps and fans, and high-current DC-DC converter synchronous rectification stages. The 40 V drain rating provides generous margin above the maximum 24 V automotive load-dump transient.
Designers should pay attention to gate-drive voltage headroom: full-rated R_DS(on) is achieved at V_GS = 10 V, so a true 10 V gate-drive rail (or higher) is required for full performance. The exposed pad must be soldered to a sufficiently large copper pour to keep junction-to-ambient thermal resistance within budget. This page consolidates distributor pricing, drop-in alternative equivalents, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IAUC60N04S6L039ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC60N04S6L039ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, RoHS Status, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC027N04LSGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.54 / Unit
View Datasheet →BSC014N06NSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.89 / Unit
View Datasheet →BSC032N04LSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.32 / Unit
View Datasheet →BSC039N06NSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.46 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IAUC60N04S6L039ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | 60 A |
| Pulsed Drain Current (I_DM) | 240 A |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm |
| Power Dissipation (P_D) | 42 W |
| Operating Junction Temperature | -55C to +175C |
| Package | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) |
IAUC60N04S6L039ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; 10 V V_GS for full enhancement |
| Pin 2 | Source — Source connection (electrically common with exposed pad) |
| Pin 3 | Source — Source connection (electrically common with exposed pad) |
| Pin 4 | Source (Exposed Pad) — Source and primary thermal path; must be soldered to PCB copper pour |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Safe Operating Area
Typical Applications
IAUC60N04S6L039ATMA1 is suitable for 6 applications: 12V Automotive ECU Power Stage, BLDC Motor Drive Half-Bridge, Reverse-Polarity and ORing Protection, Synchronous Rectification in High-Current DC-DC, Hot-Swap and Battery Disconnect Switch, LED Headlight Driver and Lighting Loads.
12V Automotive ECU Power Stage
The IAUC60N04S6L039ATMA1 fits 12 V automotive ECU power stages thanks to its 40 V V_DS margin over the 12 V bus plus load-dump transients, AEC-Q101 qualification, and 3.9 milliohm R_DS(on) at V_GS = 10 V. In a typical high-side load switch topology the part sits between the battery rail and downstream ECU circuitry, switching with a 10 V gate drive from a dedicated gate-driver or microcontroller GPIO with charge pump. Compared with older OptiMOS 3 generations this OptiMOS 6 die reduces conduction loss by roughly 30 percent, which directly lowers steady-state heat dissipation in always-on ECUs such as body control modules. The 60 A continuous rating headroom supports inrush events from capacitive loads without thermal derating in well-poured PCBs.
Recommended
BLDC Motor Drive Half-Bridge
In a 3-phase BLDC motor drive for automotive water pumps, oil pumps, or cooling fans, the IAUC60N04S6L039ATMA1 serves as either the high-side or low-side FET in each half-bridge. Its 240 A pulsed drain rating handles motor startup inrush and stall currents, while the 3.9 milliohm R_DS(on) keeps I^2R conduction losses manageable across PWM frequencies from 20-50 kHz typical of automotive BLDC. The 5x6 mm PG-TDSON-8 package fits compact inverter PCBs and the exposed source pad provides effective cooling when soldered to the inner-layer copper pour. Designers should pair the part with a gate driver capable of delivering 10 V V_GS fast enough to fully enhance the MOSFET within 50 ns to minimize crossover losses.
Recommended
Reverse-Polarity and ORing Protection
The IAUC60N04S6L039ATMA1 is well-suited as a reverse-polarity protection or ORing switch in 12 V/24 V automotive and industrial battery systems. Its 3.9 milliohm R_DS(on) keeps continuous conduction loss low - for example a 30 A continuous load dissipates only 3.5 W versus 6 W for a 7 milliohm part of the same voltage class. In an ORing configuration the low R_DS(on) reduces diode-emulation losses and improves overall system efficiency. The 40 V V_DS handles load-dump transients on the 12 V bus without requiring additional TVS clamping. The part is AEC-Q101 qualified, making it appropriate for safety-critical power management in battery management systems.
Recommended
Synchronous Rectification in High-Current DC-DC
In high-current 12 V-input buck converters for automotive infotainment, ADAS, or USB-PD charging, the IAUC60N04S6L039ATMA1 serves as the low-side synchronous rectifier. Its 3.9 milliohm R_DS(on) at V_GS = 10 V directly competes with Schottky diode forward drops, achieving efficiency gains of 4-6 percent at 20 A load versus diode rectification. The OptiMOS 6 trench technology provides low reverse-recovery charge (Q_rr in single-digit nC), reducing dead-time losses in the high-side switch. The PG-TDSON-8 footprint supports multi-phase layouts where two or three parts can be paralleled for 60-180 A rails.
Recommended
Hot-Swap and Battery Disconnect Switch
The IAUC60N04S6L039ATMA1 is appropriate for hot-swap insertion and battery disconnect switches in 12 V and 24 V distributed power systems. The 240 A pulsed drain rating accommodates the inrush current of large bulk capacitors during PCB insertion, while the 3.9 milliohm R_DS(on) keeps steady-state dissipation low when the switch is fully on. The 40 V V_DS withstands inductive transients during disconnect events, especially when the load includes motors or transformers. AEC-Q101 qualification supports deployment in automotive ECU racks and industrial battery packs.
Recommended
LED Headlight Driver and Lighting Loads
In automotive LED headlamp drivers, daytime running lights, and interior lighting power stages, the IAUC60N04S6L039ATMA1 can serve as a high-current low-side switch for PWM dimming at 200-1000 Hz. Its 60 A continuous rating comfortably handles the 5-15 A typical of modern LED headlamp strings with substantial margin. The low R_DS(on) reduces heat-sinking requirements versus older MOSFETs, and the AEC-Q101 qualification is required for headlamp reliability programs. The PG-TDSON-8 footprint also simplifies PCB routing in compact headlamp modules where space is at a premium.
Recommended
Recommended Products Summary
Engineering reference data for IAUC60N04S6L039ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC027N04LSGATMA1 | BSC014N06NSATMA1 | BSC032N04LSATMA1 | BSC039N06NSATMA1 | BSC0504NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8 (SSO8) 5x6 mm - same | PG-TDSON-8 (SSO8) 5x6 mm - same | PG-TDSON-8 (SSO8) 5x6 mm - same | PG-TDSON-8 (SSO8) 5x6 mm - same | PG-TDSON-8 (SSO8) 5x6 mm - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 60 V | 40 V | 60 V | 40 V |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | 2.7 milliohm | 1.4 milliohm | 3.2 milliohm | 3.9 milliohm | 5.0 milliohm |
| Technology Generation | OptiMOS 6 | OptiMOS (older gen) | OptiMOS | OptiMOS | OptiMOS | OptiMOS |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Operating Junction Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
Key Differentiators
- Latest-generation OptiMOS 6 vs older OptiMOS parts (vs BSC032N04LSATMA1)
- Highest continuous drain current in the Infineon 40 V PG-TDSON-8 family (vs BSC0504NSIATMA1)
- 40 V rating optimal for 12 V/24 V automotive with margin (vs BSC039N06NSATMA1)
Design Notes
Estimated: At V_IN=12V, V_OUT=0V (fully on low-side), I_D=30A continuous, P_D = I^2 * R_DS(on) = 30^2 * 0.0039 = 3.51 W. With the PG-TDSON-8 mounted on a 1 square inch copper pour on a standard 1 oz 4-layer FR4 board (theta_JA approximately 50 C/W), junction temperature rise is roughly 175 C - which would exceed the 175 C rating. To stay within safe limits at 30 A continuous, the design must use either a larger copper area (>= 2 square inches), paralleled FETs, or forced airflow. Confirm with the Infineon thermal characterization curves in the datasheet for production design.
The PG-TDSON-8 footprint relies on the exposed source pad (pin 4) as the primary thermal path. This pad MUST be soldered to a continuous copper pour on the top layer and stitched with at least 9 thermal vias (0.3 mm drill) to inner-layer copper. Gaps in the copper pour under the pad will dramatically reduce current capability and may cause thermal runaway. Use 1 oz copper minimum on inner layers and 2 oz on the top layer if possible. For high-current (>30 A continuous) designs consider doubling the top-layer copper weight to 2-3 oz.
The 3.9 milliohm R_DS(on) specification is only achieved at V_GS = 10 V. Driving the gate at 4.5 V (logic-level) or 5 V will cause R_DS(on) to increase by 2-3x, negating the part's main advantage. Use a dedicated gate driver or charge pump capable of sourcing 10-12 V. Also note that the 240 A pulsed drain rating is for pulses < 100 microseconds - longer pulses will reduce the safe current dramatically. Always cross-check SOA curves for any pulsed load that exceeds 1 ms duration.
Keep the gate-drive loop area (gate pin to driver return) as small as possible by routing the gate trace directly over a continuous ground return. For switching frequencies above 100 kHz, add a 10-100 ohm gate resistor to damp ringing and a small RC snubber (10 ohm + 1 nF) if ringing exceeds 2x V_GS. The drain-source switching loop should also be minimized by placing input capacitors close to the drain-source terminals. Reference the Infineon application note 'OptiMOS PCB Layout Guidelines' for typical 5x6 mm footprint examples.
Compliance Information
AEC-Q101 qualified for automotive applications. RoHS and REACH compliant per Infineon product page. The 'A' suffix indicates automotive qualification grade.
