BSC050N04LSGATMA1 vs BSG0813NDIATMA1 Comparison
Detailed side-by-side comparison of BSC050N04LSGATMA1 by Infineon and BSG0813NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveInfineon
BSG0813NDIATMA1
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
BSG0813NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N04LSGATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.05 |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | β |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 57 W | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | β |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 Power Block |
| Configuration | β | High-side + Low-side, integrated |
| Drain-Source Voltage (VDS) | β | 25 V |
| Low-Side Continuous Drain Current (ID) | β | 19 A |
| High-Side Continuous Drain Current (ID) | β | 33 A |
| Power Dissipation (PD) | β | 2.5 W |
| RDS(on) - Low-Side | β | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | β | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Technology Generation | β | OptiMOS 5 |
| Topology | β | Synchronous buck half-bridge |