BSC054N04NSGATMA1 vs IRF8736TRPBF Comparison

Detailed side-by-side comparison of BSC054N04NSGATMA1 by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC054N04NSGATMA1

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC054N04NSGATMA1 IRF8736TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.27
Manufacturer Infineon Technologies β€”
Part Number BSC054N04NSGATMA1 β€”
Technology OptiMOS 3 (N-Channel Trench MOSFET) StrongIRFET / HEXFET
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Tc=25C 81 A β€”
Continuous Drain Current (ID) at Ta=25C 17 A β€”
On-Resistance RDS(on) max at VGS=10V 5.4 mOhm β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation at Tc=25C 57 W β€”
Power Dissipation at Ta=25C 2.5 W β€”
Operating Temperature Range -55C to +150C -55C to +150C (junction)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) SO-8 (8-SO, MS-012AA)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Gate Drive Voltage (recommended) 10 V β€”
Lead-Free Reflow Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 18 A
Power Dissipation (PD) Max at TA=25C β€” 2.5 W
Drain-Source On-Resistance (RDS(on)) Max β€” 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical β€” 17 nC
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated β€” Yes (fully characterized avalanche voltage)
Configuration β€” Single
Packaging β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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