IRF8736TRPBF - 30V 18A N-Channel StrongIRFET MOSFET | Infineon
MPN: IRF8736TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.79 | $0.79 |
| 10 | $0.65 | $6.50 |
| 100 | $0.48 | $48.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.32 | $320.00 |
| 3,000 | $0.27 | $810.00 |
IRF8736TRPBF Overview
What is a StrongIRFET power MOSFET? StrongIRFET is Infineon's product family of low-voltage N-channel MOSFETs optimized for synchronous rectification and high-current switching applications. Within the power MOSFET taxonomy, this part sits in the sub-30V synchronous-rectifier / low-side-switch category, designed for systems where very low RDS(on), low gate charge, and a small SO-8 footprint are the primary trade-off variables.
Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 18A at TA = 25C, pulsed drain current capability significantly higher than the continuous rating, and a typical gate charge of 17 nC (per Mouser listing). The device is fully characterized for avalanche voltage and offers very low RDS(on) at 4.5V VGS, making it compatible with 5V gate-drive logic found in notebook VRMs and synchronous buck converters.
Architecturally, the IRF8736 uses Infineon's proven HEXFET silicon technology in a standard industry SO-8 (MS-012AA) outline with a large exposed drain pad for PCB thermal dissipation. The low Qg reduces switching losses at high switching frequencies, which is critical for multi-phase VRMs where each phase operates at hundreds of kHz.
Typical applications include synchronous rectification in isolated DC-DC converters for telecom/networking, low-side switches in notebook CPU/GPU buck converters, OR-ing FETs in redundant power architectures, motor drive H-bridges in low-voltage battery-powered systems, and hot-swap controllers in 12V/24V distribution.
When designing with this part, ensure adequate copper pour on the SO-8 drain pad for thermal performance - the 2.5W (Ta) rating assumes a 1 sq. inch minimum copper footprint. Gate-drive voltage must remain above 4.5V for full enhancement, and a small gate-source resistor (10-100 ohm) is recommended to suppress ringing.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical PCB layout notes not found in the manufacturer datasheet.
Drop-in alternatives for IRF8736TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF8736TRPBF (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7832TRPBF
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IRF7309TRPBF
✅ Drop-In✓ In Stock
$0.35 / Unit
View Datasheet →IRF8736PBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →IRFR2405TRPBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IRFR5305TRPBF
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →IRLML0040TRPBF
✅ Drop-In✓ In Stock
$0.16 / Unit
View Datasheet →IRF8736TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25C | 18 A |
| Power Dissipation (PD) Max at TA=25C | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | 17 nC |
| Package | SO-8 (8-SO, MS-012AA) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (fully characterized avalanche voltage) |
| Configuration | Single |
| Packaging | Tape & Reel (TRPBF suffix) |
IRF8736TRPBF Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Drain — Drain connection (common with tab) |
| Pin 6 | Drain — Drain connection (common with tab) |
| Pin 7 | Drain — Drain connection (common with tab) |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC)
Typical Applications
IRF8736TRPBF is suitable for 6 applications: Notebook CPU/GPU Multi-Phase VRM, Isolated DC-DC Converter Synchronous Rectifier, 12V Hot-Swap and OR-ing Controller, Low-Voltage Motor Drive H-Bridge, POL (Point-of-Load) Buck Converter, Battery Protection and Load Switch.
Notebook CPU/GPU Multi-Phase VRM
The IRF8736TRPBF's 4.8 mOhm RDS(on) and 17 nC Qg make it a strong fit for the synchronous-rectifier (low-side) position in multi-phase buck converters powering notebook CPUs and GPUs. In a typical 4-phase VRM operating at 300-600 kHz, the low-side MOSFET conducts the majority of the switching cycle, so the 4.8 mOhm figure directly determines conduction loss. At 15A phase current, conduction loss is approximately 1.08W per FET. The SO-8 footprint enables dense phase placement on the motherboard, and the 30V VDS provides ample margin for 19V battery transients seen during plug/unplug events.
Recommended
Isolated DC-DC Converter Synchronous Rectifier
In isolated DC-DC converters for telecom and networking systems, the IRF8736TRPBF serves as the secondary-side synchronous rectifier replacing a Schottky diode to improve efficiency by 3-5%. The primary-side switching at 36-75V DC bus creates a secondary-side rectified waveform up to 12V, well within the 30V VDS rating. The low Qg (17 nC) keeps gate-drive losses minimal even at high switching frequencies (200-500 kHz), and the fully characterized avalanche rating provides safety margin for transformer leakage-inductance voltage spikes.
Recommended
12V Hot-Swap and OR-ing Controller
The IRF8736TRPBF is well-suited for 12V distributed-power hot-swap controllers and OR-ing FETs in redundant server/telecom supplies. The 18A continuous current rating handles a single 12V distribution rail, while the 30V VDS tolerates transient overshoots during hot-plug events. The fully characterized avalanche voltage provides robustness during input inrush. Place two IRF8736s in parallel for >25A rails, or step up to IRFS4321TRLPBF (D2PAK) for >40A applications. A 10 ohm gate resistor suppresses high-frequency ringing on the long input cables typical of hot-swap bays.
Recommended
Low-Voltage Motor Drive H-Bridge
Battery-powered tools, robotics, and small EV traction motors use H-bridge configurations where the IRF8736TRPBF serves as one of four switching FETs. The 18A continuous rating supports motors up to approximately 200W at 12V (with adequate heatsinking), and the 30V VDS handles back-EMF spikes from inductive motor windings when paired with a TVS or snubber. The SO-8 footprint enables compact PCB integration in space-constrained applications. Use a dedicated gate driver such as the IRS2008STRPBF or BTN8982TAAUMA1 to provide the 10V gate drive needed for the 4.8 mOhm RDS(on) specification.
Recommended
POL (Point-of-Load) Buck Converter
For 12V-to-3.3V/5V/1.8V point-of-load converters in networking switches, routers, and FPGA accelerator cards, the IRF8736TRPBF is an ideal synchronous-rectifier candidate. With 4.8 mOhm RDS(on) and 17 nC Qg, the device maintains high efficiency (>94%) at 200 kHz switching frequency while keeping the BOM cost low. The SO-8 package enables high-density POL placement adjacent to FPGAs and ASICs. For higher output current (>15A) applications, parallel two IRF8736s or migrate to the BSC076N06NS3GATMA1 (60V part for 24V input POL).
Recommended
Battery Protection and Load Switch
In 1S-3S lithium battery packs and load-disconnect switches, the IRF8736TRPBF can serve as the reverse-polarity protection or load-disconnect FET. The 30V VDS handles up to 3S pack voltage (12.6V nominal, 14.4V max) with margin, and the 4.8 mOhm RDS(on) keeps voltage drop under 100 mV at 20A peak discharge. For ultra-low quiescent-current designs (battery storage), consider logic-level parts with sub-1uA IDSS. The avalanche rating protects against inductive kickback when switching off DC motors or solenoids.
Recommended
Recommended Products Summary
Engineering reference data for IRF8736TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7832TRPBF | IRF7309TRPBF | IRF8736PBF | IRFR2405TRPBF | IRFR5305TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SO-8 (MS-012AA) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 55 V | 55 V (P-channel) |
| Continuous ID at TA=25C | 18 A | 20 A | 5.6 A (dual) | 18 A | 36 A | 31 A (P-channel) |
| RDS(on) Max at VGS=10V | 4.8 mOhm | 5.7 mOhm | 50 mOhm (dual) | 4.8 mOhm | 16 mOhm | 65 mOhm (P-channel) |
| Gate Charge (Qg) Typical | 17 nC | 20 nC | 7 nC (per FET) | 17 nC | 60 nC | 80 nC |
| FET Polarity | N-Channel | N-Channel | N-Channel (dual) | N-Channel | N-Channel | P-Channel |
| Configuration | Single | Single | Dual | Single | Single | Single |
Key Differentiators
- Lowest RDS(on) in the 30V SO-8 StrongIRFET class at this generation (vs IRF7832TRPBF)
- Optimized synchronous-rectifier silicon vs general-purpose N-FET (vs IRFR2405TRPBF)
- Industry-standard SO-8 pinout compatible across multiple Infineon parts (vs IRF7309TRPBF)
Design Notes
The IRF8736TRPBF is rated for 2.5W power dissipation at TA = 25C, which assumes a minimum of 1 square inch of copper on the drain pad (SO-8 exposed tab). Estimated: at RDS(on) = 4.8 mOhm and ID = 10A continuous, conduction loss = I^2 x RDS(on) = 0.48W, well within the 2.5W rating with adequate copper. For continuous currents above 12A in still air, use 2+ square inches of copper or attach a small heatsink. The junction-to-ambient thermal resistance is approximately 50 C/W on a standard 1 sq. inch pad.
Place the SO-8 drain tab on a continuous copper pour connected to the switching node. Keep the high-side/low-side FET loop area as small as possible (typically <0.5 sq. cm) to minimize parasitic inductance that causes drain-source voltage overshoot. Use 4-6 vias (0.3 mm drill) under the drain pad for thermal transfer to inner copper layers. Place the input decoupling capacitor within 5 mm of the high-side FET drain and the low-side FET source. Avoid running signal traces under the drain tab to prevent coupling noise into sensitive analog circuits.
Do not drive the gate above the absolute maximum VGS rating of +/-20V - use a 12V or 10V gate drive for best efficiency. Always add a 10-100 ohm gate-source resistor to suppress ringing and prevent accidental turn-on from high dv/dt on the drain. Ensure the gate-drive supply can source enough peak current to charge the 17 nC Qg in the desired switching time; for a 100ns rise time this requires at least 170 mA of peak gate current. The body diode of the IRF8736 is not optimized for hard-switched rectification; use a Schottky in parallel if reverse-recovery losses matter.
Compliance Information
PBF suffix indicates lead-free / RoHS compliant per Infineon documentation. Not AEC-Q100 qualified - for automotive applications, use the automotive-grade equivalent from Infineon's AutoIRFET family or onsemi's automotive N-FET line.
