BSC072N08NS5ATMA1 vs BSC021N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC072N08NS5ATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC072N08NS5ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) at Tc | 74 A | β |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: full min/max operating Tj] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Shipping Pack | Tape & Reel (ATMA1) | β |
| Standard Pack Quantity | 5000 | β |
| Part Number | β | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 226 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | β | 2.1 mΞ© |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| Power Dissipation P_D (Tc=25Β°C) | β | 214 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Total Gate Charge Q_G typ | β | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | β | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Delivery Form | β | Tape & Reel (T&R) |