BSC076N04NDATMA1 vs BSZ068N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and BSZ068N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N04NDATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| Configuration | Dual N-Channel (independent MOSFETs) | β |
| Drain-Source Voltage (VDS) max | 40 V | β |
| Continuous Drain Current (ID) | 20 A (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | β |
| On-Resistance RDS(on) max | 7.6 mOhm | 6.8 mΞ© @ VGS=10 V |
| Power Dissipation (Ta) | 2.3 W | 2.1 W |
| Power Dissipation (Tc) | 65 W | 46 W |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 5 (trench-gate) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | β |
| FET Type | 2x N-Channel MOSFET array | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc) | β | 40 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID at Ta] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg typ] |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| Package | β | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| MSL Level | β | MSL1 |
| RoHS / Halogen-Free | β | RoHS compliant, halogen-free |