BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
MPN: BSZ068N06NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.86 | $8.60 |
| 100 | $0.75 | $75.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.62 | $620.00 |
BSZ068N06NSATMA1 Overview
What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is the workhorse switching device in modern power electronics. An N-channel MOSFET conducts electrons from drain to source when a positive gate-source voltage is applied. Low-voltage N-channel MOSFETs such as the BSZ068N06NS family form the synchronous-rectifier and high-side/low-side switch stages in buck converters, half-bridges, and full-bridges used in computing, telecom, and industrial power systems.
Key features of the BSZ068N06NSATMA1 include 40 % lower RDS(on) than comparable legacy devices, a 40 % improvement in figure of merit (FOM = RDS(on) × Qg) over similar parts, RoHS compliance with halogen-free construction, and MSL1 moisture-sensitivity rating. The device is optimized for synchronous rectification, allowing 12 V and 24 V bus converters to achieve higher system efficiency than with previous-generation MOSFETs.
The OptiMOS 5 process technology uses a trench-gate structure with an advanced epitaxial layer to minimize both conduction loss and switching loss. Compared with OptiMOS 3 predecessors, the BSZ068N06NSATMA1 halves conduction losses at full load and reduces gate charge by 30 %, enabling switching frequencies above 500 kHz without excessive driver loss.
Typical applications include synchronous rectification in 12 V-48 V DC-DC converters, high-side/low-side switching in motor drives, OR-ing FETs in redundant power supplies, battery management for power tools and e-bikes, and hot-swap controllers in telecom boards. In each case, the 6.8 mΩ RDS(on) reduces I²R losses while the small TSDSON footprint saves PCB area.
When designing with this MOSFET, ensure the gate driver can supply the miller plateau current (typically 4-6 A peak) and that the PCB layout minimizes parasitic source inductance to limit ringing. A 1 Ω gate resistor is recommended to dampen oscillations in low-side switch positions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that the bare manufacturer datasheet does not aggregate, helping engineers evaluate sourcing, second-source, and thermal trade-offs in a single view.
Drop-in alternatives for BSZ068N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ068N06NSATMA1 (same form factor and footprint) — differing in Technology, Operating Temperature Range, FET Type, Package, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISZ068N06NM6ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ068N06NSATMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IQDH35N03LM5SCATMA1
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →BSZ068N06NSATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 40 A |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 46 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 |
| RoHS / Halogen-Free | RoHS compliant, halogen-free |
BSZ068N06NSATMA1 Pin Configuration
| Pin 1 | S — Source (pin 1) |
| Pin 2 | S — Source (pin 2) |
| Pin 3 | S — Source (pin 3) |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (pin 5) |
| Pin 6 | D — Drain (pin 6) |
| Pin 7 | D — Drain (pin 7) |
| Pin 8 | D — Drain (pin 8) |
BSZ068N06NSATMA1 Safe Operating Area
Typical Applications
BSZ068N06NSATMA1 is suitable for 6 applications: Synchronous Rectification in 12 V DC-DC Converters, Brushless DC (BLDC) Motor Drive Half-Bridges, OR-ing FET for Redundant Power Supplies, Battery Management for Power Tools and E-Bikes, Hot-Swap Controller Switch, Automotive 12 V / 24 V Load Switching.
Synchronous Rectification in 12 V DC-DC Converters
The BSZ068N06NSATMA1 is the textbook synchronous-rectifier FET for 12 V point-of-load and intermediate-bus converters. Its 60 V VDS provides ample margin for 12 V transients and ringing spikes, while the 6.8 mΩ RDS(on) keeps I²R conduction losses under 1 % at 20 A continuous load. Placed on the low-side switch position with a 10 V gate drive, it replaces Schottky diodes to raise peak efficiency from 90 % (diode) to 96 %+ (MOSFET). The TSDSON-8 package's drain-down thermal pad routes heat directly into the inner PCB copper layers, supporting 2-3 W dissipation without an external heatsink in standard 4-layer boards.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridges
In 24 V and 48 V BLDC motor drives, the BSZ068N06NSATMA1 serves as either the high-side or low-side switch in a 3-phase half-bridge inverter. Its 46 W power dissipation at TC supports continuous motor currents up to 40 A, while the 6.8 mΩ RDS(on) minimizes thermal rise during locked-rotor stalls. The OptiMOS 5 trench-gate structure achieves sub-30 ns switching, reducing dead-time loss in 50 kHz PWM motor control. Paired with a gate driver such as 6EDL04N02PR or IRS2304SPBF, it forms the per-phase power stage for industrial automation, e-bike traction, and power-tool motor control.
Recommended
OR-ing FET for Redundant Power Supplies
The BSZ068N06NSATMA1 is well-suited as an OR-ing FET in N+1 redundant 12 V and 24 V power systems used in telecom, data-center, and industrial control equipment. Its 60 V VDS handles 24 V bus transients plus reverse-voltage spikes from load dump events, and the 6.8 mΩ RDS(on) dissipates only 0.7 W at 10 A continuous load (vs 2 W for Schottky OR-ing). When paired with an OR-ing controller such as BTS710336ESAXUMA1 or a discrete amplifier, the FET prevents reverse-current flow during parallel-PSU fault conditions, supporting hot-swap and live insertion on the backplane.
Recommended
Battery Management for Power Tools and E-Bikes
For 18 V / 36 V / 48 V battery management systems in cordless power tools and e-bikes, the BSZ068N06NSATMA1 functions as the protection FET in the discharge path or as the high-side switch in the motor inverter. The 60 V VDS comfortably exceeds 48 V Li-ion pack voltages including full-charge tolerance, and the 6.8 mΩ RDS(on) reduces I²R heating during 30 A peak tool-load bursts. The 150 °C maximum junction temperature allows short-duration overload without tripping thermal protection. In BMS topologies, the device pairs with a battery monitor such as TLE9012DQU or TLF44773LAXUMA1.
Recommended
Hot-Swap Controller Switch
In 12 V and 24 V hot-swap applications, the BSZ068N06NSATMA1 serves as the series pass element that isolates a live backplane from inrush current during board insertion. The 60 V VDS tolerates ringing during plug-in events, while the 6.8 mΩ RDS(on) keeps steady-state dissipation below 1 W at 10 A load. The part's SOA rating supports 100 % rated current at TC for hot-swap surge profiles, and the small TSDSON-8 footprint fits next to the hot-swap controller such as BTS7003A1EPWXUMA2 or ISL6141 on PCIe, AdvancedTCA, and PXI backplanes.
Recommended
Automotive 12 V / 24 V Load Switching
The BSZ068N06NSATMA1 is suitable for automotive body-electronics load switching at 12 V and 24 V, including headlamp drivers, fan controls, and accessory power switches. The 60 V VDS handles 24 V commercial-vehicle bus plus load-dump transients (with TVS clamping), and the 6.8 mΩ RDS(on) reduces thermal stress in steady-state. While the standard part is not AEC-Q100 qualified, designers select it for non-safety body-electronics modules; safety-critical loads require the Q1-graded variant such as IAUC60N04S6L030HATMA1. Pair with smart switches BTS710336ESAXUMA1 or BTS70402EPGXUMA1 for diagnostic feedback.
Recommended
Recommended Products Summary
Engineering reference data for BSZ068N06NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ068N06NM6ATMA1 | BSC076N04NDATMA1 | ISC015N06NM5ATMA1 | IPB110P06LMATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 60 V | 30 V |
| RDS(on) max @ 10 V VGS | 6.8 mΩ | 6.8 mΩ | 7.6 mΩ | 1.5 mΩ | 3.5 mΩ |
| Continuous Drain Current (Tc) | 40 A | 40 A | 40 A | 60 A | 80 A |
| Technology | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Channel Polarity | N-channel | N-channel | N-channel | N-channel | P-channel |
| Power Dissipation (Tc) | 46 W | 46 W | 46 W | 50 W | 46 W |
| Unit Price @ 1000 pcs (USD, as of 2026-09-15) | 0.62 | 0.75 | 0.55 | 1.10 | 0.95 |
Key Differentiators
- Industry-leading RDS(on) × Qg figure of merit at 60 V in TSDSON-8 footprint (vs ISC015N06NM5ATMA1)
- OptiMOS 5 technology generation (vs BSZ0901NS (older OptiMOS 3 family))
- Standard 60 V VDS rating optimized for 12 V/24 V industrial buses (vs IPA083N10N5 (100 V part))
Design Notes
The PG-TSDSON-8-FL package has a typical RθJA of 50 °C/W on a 1 oz copper 1 square-inch pad. At 2 W continuous dissipation (e.g. 20 A × 6.8 mΩ × 1.5 for thermal margin), junction temperature rises 100 °C above ambient, exceeding the 150 °C absolute maximum at TA=50 °C. For designs above 1.5 W sustained, use a 4-layer PCB with 2 oz copper and thermal vias under the drain pad. Estimated: assumes single-layer copper spreader on FR4.
Place the gate driver within 5 mm of the gate pin to minimize parasitic inductance in the gate loop. Use a 1 Ω series gate resistor to dampen Miller-plateau ringing. The source pin should connect directly to the local power-ground via multiple vias to limit parasitic source inductance (target <2 nH), which otherwise degrades switching loss and creates voltage overshoot during turn-off.
Never exceed VGS of ±20 V (absolute max). Do not operate the part without VGS reaching at least 6 V, which is the typical Miller plateau - lower drive voltage forces the FET into its linear region with 10× higher RDS(on). For half-bridge configurations, insert 100 ns of dead time to prevent shoot-through. Ensure the gate-drive IC can source/sink 4 A peak for the Qg charge, otherwise turn-on/off slows and switching loss rises.
Route the high-current source and drain paths on the top layer with minimum 1 oz copper pour, never as thin traces. Stitch the inner ground layer directly under the TSDSON-8 thermal pad with a 3x3 grid of 0.3 mm thermal vias to extract heat into the inner copper plane. Avoid routing sensitive analog signals under the switching node - the high dv/dt couples capacitively into nearby traces.
Compliance Information
RoHS compliant and halogen-free per Infineon OptiMOS 5 datasheet family. MSL1 rated. Not AEC-Q100 qualified; for automotive safety-critical applications use AEC-Q100 graded variants such as IAUC60N04S6L030HATMA1.
