BSC084P03NS3GATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC084P03NS3GATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC084P03NS3GATMA1
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC084P03NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.24 | $0.34 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (Ta) | 14.9 A | β |
| Continuous Drain Current (Tc) | 78.6 A | β |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | β |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | β |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | β |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance (Ciss) | 3.19 nF | β |
| Output Capacitance (Coss) | 110 pF | β |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ0901NSIATMA1 |
| Series | β | OptiMOS 25V |
| Technology | β | OptiMOS trench N-channel MOSFET |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |