BSZ0901NSIATMA1 - 30V 40A OptiMOS N-MOSFET TSDSON-8 | Infineon
MPN: BSZ0901NSIATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.62 | $62.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.41 | $410.00 |
| 5,000 | $0.34 | $1,700.00 |
BSZ0901NSIATMA1 Overview
What is an OptiMOS power MOSFET? OptiMOS is Infineon's trench-based power MOSFET family optimised for very low on-state resistance (RDS(on)) per unit silicon area and very low gate and output charge (Qg, Qoss). This class of N-channel MOSFETs is the standard building block for synchronous buck converters, load switches, hot-swap circuits and motor drive half-bridges in servers, datacom and telecom equipment where every milliohm of conduction loss and every nanosecond of switching loss translate directly into efficiency and thermal budgets.
Key differentiating features of the BSZ0901NSIATMA1 are its 30 V drain-source rating that comfortably exceeds nominal 12 V bus rails with margin for transients, an extremely low gate charge that minimises driver losses at high switching frequencies, and the 3.3 mm x 3.3 mm PQFN/TSDSON footprint that places the source on the exposed pad for the lowest possible thermal impedance path. The part is designed specifically as the synchronous-rectifier or low-side switch in point-of-load DC/DC converters for computing and telecom hardware.
Architecture-wise the device uses Infineon's OptiMOS trench cell technology with an integrated Schottky-like body diode optimised for synchronous-rectifier operation. Compared with older planar MOSFETs in the same footprint, this part typically cuts conduction losses in half at the same RDS(on) class and reduces switching losses by 30-50%, enabling higher-frequency operation (300 kHz to 1 MHz) without efficiency penalties in compact buck topologies.
Typical applications include high-current synchronous buck converters on 12 V server and telecom rails, hot-swap / eFuse circuits on distributed backplanes, USB-PD and Type-C load switches, motor-drive low-side switches in 24 V industrial systems, and battery protection / OR-ing FETs in multi-cell Li-ion packs. The combination of 30 V rating, ultra-low Qg and the small TSDSON-8 footprint also makes it attractive for compact POL modules on FPGAs and SoCs.
When designing with the BSZ0901NSIATMA1, observe the SOA carefully at high drain currents and low VDS, where thermal resistance dominates; in practice the part should be mounted on at least 1 square centimetre of copper pour on a 4-layer FR-4 board to stay within the 2.1 W Ta dissipation rating. The exposed pad is the main thermal and low-inductance source connection and must be soldered to the PCB land pattern specified in the manufacturer datasheet to achieve rated performance.
This page synthesises distributor pricing from DigiKey, Mouser, LCSC and Arrow, drop-in TSDSON-8 alternatives, and practical design guidance not found in the bare datasheet.
Drop-in alternatives for BSZ0901NSIATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSZ0901NSIATMA1 (same form factor and footprint) β differing in Package, Technology, Drain-Source Voltage (VDS), MSL Level, Continuous Drain Current (ID) at Ta=25C.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSZ0501NSIATMA1
β Drop-Inβ In Stock
$0.29 / Unit
View Datasheet βBSC0921NDIATMA1
β Drop-Inβ In Stock
$0.68 / Unit
View Datasheet βBSZ017NE2LS5IATMA1
β Drop-Inβ In Stock
$0.64 / Unit
View Datasheet βBSZ031NE2LS5ATMA1
β Drop-Inβ In Stock
$0.26 / Unit
View Datasheet βBSC0502NSIATMA1
β Drop-Inβ In Stock
$0.85 / Unit
View Datasheet βBSC028N06NSTATMA1
β Drop-Inβ In Stock
$0.4 / Unit
View Datasheet βBSZ0901NS
β Drop-Inπ Reference alternative (not in catalog)
VBQF1302
β Drop-Inπ Reference alternative (not in catalog)
BSZ0901NSIATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 |
| Series | OptiMOS 25V |
| Technology | OptiMOS trench N-channel MOSFET |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W |
| Power Dissipation (PD) at Tc=25C | 69 W |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| RoHS Status | Compliant |
BSZ0901NSIATMA1 Pin Configuration
| Pin 1 | Source β Source connection (also bonded to exposed pad) |
| Pin 2 | Source β Source connection (also bonded to exposed pad) |
| Pin 3 | Source β Source connection (also bonded to exposed pad) |
| Pin 4 | Gate β Gate drive input |
| Pin 5 | Drain β Drain connection |
| Pin 6 | Source β Source connection (also bonded to exposed pad) |
| Pin 7 | Source β Source connection (also bonded to exposed pad) |
| Pin 8 | Source β Source connection (also bonded to exposed pad) |
| Pin EP | Source / Thermal Pad β Exposed pad - source terminal and primary thermal path |
BSZ0901NSIATMA1 Safe Operating Area (estimated envelope based on Ta=25C)
Typical Applications
BSZ0901NSIATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter for Server POL, Hot-Swap / eFuse on Telecom 12V Backplane, USB-PD / Type-C VBUS Load Switch, Industrial 24V Motor-Drive Low-Side Switch, Battery Protection / OR-ing FET in Li-ion Packs, FPGA / SoC Core-Rail Point-of-Load Module.
12V Synchronous Buck Converter for Server POL
The BSZ0901NSIATMA1 fits the synchronous-rectifier (low-side) position in a 12V-input synchronous buck converter for server point-of-load regulation. Its 30V VDS rating provides ample margin above a 12V nominal bus (including 15V transients per server VRM specs), while the OptiMOS 25V family's ultra-low gate and output charge cuts switching loss at 300kHz-1MHz switching frequencies typical of high-density VRs. At 25A continuous ID and 2.1W Ta power dissipation, the part drops into standard 3.3x3.3mm TSDSON POL layouts without requiring a heatsink. Pair it with a TI TPS54360 controller or an Infineon IR38263 for a 12V-to-1.8V/3.3V/5V POL stage.
Recommended
Hot-Swap / eFuse on Telecom 12V Backplane
The BSZ0901NSIATMA1 is well suited as the main pass / disconnect FET in a 12V hot-swap or eFuse circuit on telecom backplanes, where 30V VDS, 25A continuous ID at Ta and low RDS(on) keep conduction loss below 50mW at full load. The OptiMOS 25V technology's linear-mode SOA allows brief inrush current limiting without immediate thermal shutdown, which is critical for plug-in cards with large bulk capacitance. The TSDSON-8-FL 3.3x3.3mm footprint simplifies layout alongside dedicated hot-swap controllers.
Recommended
USB-PD / Type-C VBUS Load Switch
In USB-PD and Type-C VBUS load-switch roles the BSZ0901NSIATMA1 acts as the high-side or low-side disconnect FET, leveraging its 30V VDS rating to handle 20V PD profiles and its low Qg to keep driver losses minimal during fast role-swap transitions. The 25A continuous rating supports 100W PD3.1 EPR power levels with margin, while the 3.3x3.3mm TSDSON-8 footprint is small enough for compact dongles and docking stations. Place it next to a USB-PD controller such as FUSB302 or Infineon EZ-PD CCG7D for a turnkey VBUS solution.
Recommended
Industrial 24V Motor-Drive Low-Side Switch
The BSZ0901NSIATMA1 serves as the low-side switching element in 24V industrial motor-drive half-bridges and brushed-DC motor drivers, where the 30V VDS rating handles 24V nominal with inductive-flyback margin and the OptiMOS 25V trench technology delivers fast switching for PWM frequencies up to 50kHz. At 40A pulsed Tc rating it can sustain the inrush current of motor-start events. For 24V industrial designs, pair it with an Infineon BTN7971B or IRS2004STRPBF half-bridge driver.
Recommended
Battery Protection / OR-ing FET in Li-ion Packs
In multi-cell Li-ion battery packs the BSZ0901NSIATMA1 operates as the discharge OR-ing FET or protection disconnect switch, taking advantage of the 30V VDS rating to handle 4S (16.8V max) configurations comfortably. Low RDS(on) minimises conduction loss during high-current discharge (important for power-tool and e-bike packs), while the small TSDSON-8 footprint supports dense pack-level PCBs. The OptiMOS 25V body diode is suitable for low-frequency switching; for higher-frequency synchronous-pack topologies, prefer the dual BSC0921NDIATMA1.
Recommended
FPGA / SoC Core-Rail Point-of-Load Module
The BSZ0901NSIATMA1 is a strong low-side / synchronous-rectifier choice for the compact point-of-load modules that feed FPGA core rails, where board area is at a premium and efficiency above 92% is required at 1-3MHz switching. The 3.3x3.3mm TSDSON-8 footprint allows placement directly under the inductor of a 12V-to-core buck, and the OptiMOS 25V technology's low Qoss reduces switching-related loss at high di/dt. Pair it with an Infineon IR38263 or a TI TPS543B20 for a high-density FPGA POL solution.
Recommended
Recommended Products Summary
Engineering reference data for BSZ0901NSIATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ0501NSIATMA1 | BSC0921NDIATMA1 | BSZ017NE2LS5IATMA1 | VBQF1302 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TSDSON-8-FL (3.3x3.3 mm) | PG-TSDSON-8-FL (3.3x3.3 mm) - same | PG-TSDSON-8-FL (3.3x3.3 mm) - same | PG-TSDSON-8-FL (3.3x3.3 mm) - same | PG-TSDSON-8-FL (3.3x3.3 mm) - same |
| VDS (Drain-Source Voltage) | 30 V | 30 V | 30 V | 25 V | 30 V |
| Technology Platform | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 5 25V | Trench N-channel (VBsemi) |
| Configuration | Single N-channel | Single N-channel | Dual N-channel | Single N-channel | Single N-channel |
| Primary Application | 12V server/datacom POL, load switch | Higher-current POL | Synchronous buck half-bridge | High-density POL | 12V server/datacom/telecom POL |
Key Differentiators
- Lower gate and output charge than older planar MOSFETs (vs BSZ017NE2LS5IATMA1)
- Single N-channel footprint enables flexible half-bridge designs (vs BSC0921NDIATMA1)
- 30V VDS class covers 24V industrial rails with margin (vs BSZ017NE2LS5IATMA1)
Design Notes
Estimated: at 25A continuous drain current into a 25C ambient with 1 sq inch of 4-layer FR-4 copper, the part dissipates approximately P = I^2 x RDS(on). With RDS(on) in the low single-digit milliohm range, this yields 1-3W of conduction loss, which is at or beyond the 2.1W Ta rating. A larger copper pour or a small top-side heatsink is recommended for sustained 25A operation. The exposed pad must be soldered to a contiguous copper land on at least 4 layers for rated thermal performance.
Use a TSDSON-8 land pattern with an oversized exposed-pad copper pour directly under the package. Per Infineon application notes, the gate-drive loop must be minimised - keep the gate driver within 5 mm of the gate pin and use a 4-layer PCB with a continuous ground plane directly under the drain-source loop. Place input capacitors as close to the drain and source pads as possible to minimise parasitic inductance and ringing.
Do not exceed 30V VDS even for transients - inductive spikes from poor PCB layout can easily exceed this rating. Ensure the gate-source voltage stays within +/-20V maximum; if using a 12V gate drive with high dV/dt, add a gate-source resistor (10-100k) to prevent Miller-effect turn-on. Verify SOA at the operating point before committing to the design, especially at high drain currents and low VDS where thermal resistance dominates.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial grade part. Lead-free reflow-compatible. Halogen-free mould compound per Infineon green-product policy.
