BSC0901NSATMA1 vs BSC014N04LSIATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveInfineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC0901NSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 30V | β |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 5 (trench, thin-wafer) |
| Drain-to-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Continuous Drain Current (ID) at Ta | 28 A | β |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | β |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | β |
| Avalanche Energy (EAS) | 80 mJ | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| Package | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 | β |
| Built-in Body Diode | Yes | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, Ta) | β | 31 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | β | 96 W |
| Power Dissipation (PD, Ta) | β | 2.5 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Tradename | β | OptiMOS |