BSC0901NSATMA1 vs BSC022N04LS6ATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveInfineon
BSC022N04LS6ATMA1
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0901NSATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 30V | β |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOSβ’ 6 (N-channel trench) |
| Drain-to-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 28 A | 27 A |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | β |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | β |
| Avalanche Energy (EAS) | 80 mJ | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | SuperSO8 5x6 (PG-TDSON-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 | β |
| Built-in Body Diode | Yes | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Maximum Pulsed Drain Current (IDM) | β | 139 A |
| On-Resistance RDS(on) max | β | 2.2 mOhm at VGS=10 V |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 79 W |
| Channel Type | β | N-Channel |
| Pin Count | β | 8 |
| Operating Temperature | β | -55 C to +175 C (junction) |