BSC0901NSIATMA1 vs BSC155N06NDATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSIATMA1 by Infineon and BSC155N06NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β Active
Specification Comparison
| Parameter | BSC0901NSIATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.62 |
| Technology | OptiMOS 25V N-Channel Power MOSFET | OptiMOS 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | -55 C to +175 C |
| Package | PG-TDSON-8-6 (5x6 mm with exposed pad) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC155N06NDATMA1 |
| Configuration | β | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | β | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | β | 50 W |
| Lead-Free Plating | β | Yes |
| Shoot-Through Immunity Qgd/Qgs | β | < 0.8 |