BSC093N15NS5ATMA1 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC093N15NS5ATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.83 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS 5 N-Channel Power MOSFET
FET Type N-Channel β€”
Drain-Source Voltage (VDS) Max 150 V β€”
Continuous Drain Current (ID) at TC 87 A β€”
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΞ© β€”
Power Dissipation (PD) at TC 139 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Halogen Free [DATA_NEEDED: halogen free status] β€”
Part Family β€” OptiMOS 5
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
On-Resistance RDS(on) max β€” 11 mΞ©
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]

Datasheets & Resources

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