BSC117N08NS5ATMA1 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active
Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC117N08NS5ATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC117N08NS5ATMA1 β€”
Technology OptiMOS 5 OptiMOS 5 N-Channel Power MOSFET
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) max 49 A (Tc) β€”
On-State Resistance (RDS(on)) max 11.7 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 50 W β€”
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Operating Temperature Range -55 C to +150 C (typical MOSFET junction) [DATA_NEEDED: operating temperature range]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level 1 [DATA_NEEDED: MSL level]
Part Family β€” OptiMOS 5
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
On-Resistance RDS(on) max β€” 11 mΞ©
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]

Datasheets & Resources

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