BSC150N03LDGATMA1 vs BSC032N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC150N03LDGATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 β Active
Specification Comparison
| Parameter | BSC150N03LDGATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) @ TA=25C | 20 A | β |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | β |
| Gate-Source Voltage (Vgs) | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | β |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | β |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | β |
| Power Dissipation (Pd) | 26 W | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Part Series | β | OptiMOS 5 40V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 21 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 98 A |
| RDS(on) max at VGS=10V | β | 3.2 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Technology | β | OptiMOS 5 trench |
| Lead-Free | β | Yes |