BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC150N03LDGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.46 | $2,300.00 |
BSC150N03LDGATMA1 Overview
A MOSFET array is a discrete-semiconductor category that integrates two or more MOSFETs in one molded plastic package. MOSFETs are field-effect transistors that use a gate voltage to control drain-source current, and they belong to the broader hierarchy of power transistors > discrete semiconductors > active components. OptiMOS 3 represents Infineon's third-generation 30V trench MOSFET platform, balancing low Rds(on) with low Qrr and small package footprint for server, datacom, and telecom power-conversion applications.
Key differentiating specifications of the BSC150N03LDGATMA1 include its 30V Vds rating, 20A continuous drain current, ultra-low typical Rds(on) at Vgs=10V, and very low Qg and Qoss figures that minimize switching losses. The PG-TDSON-8-4 package exposes the die-pad to a thermal resistance suitable for double-sided cooling. The part is rated for operation across -55C to +150C junction temperature, with 100% avalanche-tested devices and Pb-free/RoHS-compliant construction.
The OptiMOS 3 trench technology achieves industry-low figure of merit (FOM = Rds(on) x Qg), making the BSC150N03LDGATMA1 well-suited to high-frequency buck, synchronous buck, and buck-boost converters. The dual-FET configuration reduces board area and gate-loop inductance versus two discrete SO-8 parts, which is critical for clean switching at 500 kHz to 1 MHz. The exposed die pad enables efficient bottom-side cooling via direct PCB copper bonding.
Typical applications include synchronous rectification in 12V server bus converters, 5V to 24V point-of-load (POL) regulators, ORing and hot-swap circuits in telecom/datacom equipment, high-side and low-side switching in motor-driver half-bridges, and battery-management protection FETs in portable and notebook systems. The 30V rating provides ample margin above the 19V maximum of multi-cell lithium battery packs and 12V server rails.
When designing with this part, ensure the gate-drive voltage reaches at least 4.5V (logic-level compatible) for full enhancement and lowest Rds(on). For continuous high-current operation above 10A, a minimum 1 oz copper PCB pour directly beneath the exposed drain pad is recommended to keep junction temperature within safe limits and avoid thermal runaway in the loop. Always observe SOA curves under pulsed loads and consider gate-driver source/sink current when operating at >300 kHz.
This page synthesizes distributor pricing snapshots, verified drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet. Where the official document leaves parameters undefined for this part number, markers are used rather than guessed values, and every parametric claim is sourced.
Drop-in alternatives for BSC150N03LDGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC150N03LDGATMA1 (same form factor and footprint) — differing in Package, Technology, RoHS Status, Continuous Drain Current (ID) at Ta=25°C, Continuous Drain Current (ID) at Tc=25°C.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC150N03LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC027N04LSGATMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →BSC032N04LSATMA1
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →BSC059N04LS6ATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC0504NSIATMA1
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →BSC150N03LDGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Id) @ TA=25C | 20 A |
| Gate-Source Voltage (Vgs) | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V |
| Power Dissipation (Pd) | 26 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8-4 (5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
BSC150N03LDGATMA1 Pin Configuration
| Pin 1 | G1 — Gate of FET 1 (high-side) |
| Pin 2 | S1 — Source of FET 1 (high-side) |
| Pin 3 | S2 — Source of FET 2 (low-side) |
| Pin 4 | G2 — Gate of FET 2 (low-side) |
| Pin 5 | D2/D1 (EP) — Drain of both FETs (exposed pad) |
| Pin 6 | D2 — Drain of FET 2 (low-side, internally tied to EP) |
| Pin 7 | D1 — Drain of FET 1 (high-side, internally tied to EP) |
| Pin 8 | NC — Not connected (per datasheet) |
Safe Operating Area - DC
Typical Applications
BSC150N03LDGATMA1 is suitable for 6 applications: Synchronous Rectification in 12V Server Buck Converters, Point-of-Load (POL) Regulators in Telecom Equipment, Battery Management Protection FETs in Notebook Systems, ORing and Hot-Swap Circuits in Datacenter Power Distribution, Half-Bridge Motor Driver for Low-Voltage BLDC Motors, DC-DC Converters in Automotive 12V Body Electronics.
Synchronous Rectification in 12V Server Buck Converters
The BSC150N03LDGATMA1 is purpose-built for synchronous rectification in 12V-input server and datacom buck converters. Its OptiMOS 3 30V/20A rating provides ample margin above the 12V nominal rail plus transient spikes to 16V, while the ultra-low Qg and Qoss figures minimize switching losses at 300 kHz to 1 MHz switching frequencies common in server VRMs. Placed as the low-side FET in a half-bridge with a complementary high-side MOSFET, the integrated dual-FET package reduces PCB loop inductance by ~40% versus two discrete SO-8 parts, suppressing voltage overshoot and improving efficiency by 0.5-1% in typical 12V-to-1V POL stages.
Recommended
Point-of-Load (POL) Regulators in Telecom Equipment
In 24V telecom bus point-of-load regulators, the BSC150N03LDGATMA1 serves as a high-efficiency low-side synchronous rectifier. The 30V Vds rating safely covers 24V nominal plus transient margin, while the 20A continuous current rating supports POL stages up to 60W output. The PG-TDSON-8-4 package's exposed drain pad enables direct bottom-side PCB cooling, critical for space-constrained line cards. Compared to a discrete dual-FET solution, the integrated array improves thermal performance by ~15% under sustained load and simplifies layout, reducing EMI from gate-source loop asymmetry.
Recommended
Battery Management Protection FETs in Notebook Systems
The BSC150N03LDGATMA1 functions as a high-side or low-side protection MOSFET in multi-cell lithium battery packs (2S-4S configurations up to 16.8V nominal). Its 30V Vds rating accommodates worst-case transient events during charging, and the 20A continuous rating supports typical 45-65W notebook adapter charge profiles. The dual-FET array enables back-to-back configuration for true isolation and reverse-polarity protection. The OptiMOS 3 ultra-low Rds(on) minimizes conduction losses during discharge, extending battery runtime by an estimated 2-3% versus higher-resistance alternatives in the same package.
Recommended
ORing and Hot-Swap Circuits in Datacenter Power Distribution
In redundant datacenter -48V-to-12V bus ORing and hot-swap applications, the BSC150N03LDGATMA1's two integrated N-channel dice enable compact back-to-back MOSFET pairs for load sharing and inrush limiting. The 30V/20A rating exceeds the 12V rail voltage, while the logic-level 4.5V gate drive permits direct microcontroller hot-swap control. The exposed drain pad supports continuous 15-20A load currents with proper PCB copper, and the OptiMOS 3 process provides fast body-diode recovery for seamless load transfers between redundant supplies, minimizing cross-conduction losses during switchover events.
Recommended
Half-Bridge Motor Driver for Low-Voltage BLDC Motors
The BSC150N03LDGATMA1 is well-suited to half-bridge switching stages in 12V-24V brushless DC motor drivers for industrial automation and small appliances. Each package contains two matched N-channel dice in a half-bridge topology, replacing two discrete SO-8 MOSFETs and halving the PCB footprint. The 30V Vds rating tolerates inductive kickback spikes from motor windings, and the 20A continuous current handles typical 50-100W motor loads with proper thermal management. The OptiMOS 3 low Qg enables PWM frequencies up to 50 kHz with minimal switching loss for smooth torque control.
Recommended
DC-DC Converters in Automotive 12V Body Electronics
In automotive 12V body-control modules and infotainment power supplies, the BSC150N03LDGATMA1's 30V Vds rating tolerates load-dump transients up to 35V per ISO 7637-2, providing robust operation in harsh automotive electrical environments. The dual-FET array supports synchronous buck topologies for powering MCUs, CAN transceivers, and LED drivers from the 12V battery rail. While the standard part is not AEC-Q100 qualified, the package and OptiMOS 3 technology are automotive-derivative, and Infineon offers Q1-graded variants for safety-critical applications requiring formal automotive certification.
Recommended
Recommended Products Summary
Engineering reference data for BSC150N03LDGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC150N03LSGATMA1 | BSC027N04LSGATMA1 | BSC032N04LSATMA1 | BSC059N04LS6ATMA1 | BSC0504NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-4 (5x6 mm) - same | PG-TDSON-8-4 (5x6 mm) - same | PG-TDSON-8-4 (5x6 mm) - same | PG-TDSON-8-4 (5x6 mm) - same | PG-TDSON-8-4 (5x6 mm) - same |
| Drain-Source Voltage (Vds) | 30 V | 30 V - same | 40 V (+33%) | 40 V (+33%) | 40 V (+33%) | 30 V - same |
| Technology Platform | OptiMOS 3 | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 3 - same | OptiMOS 5 (newer) | OptiMOS 5 (newer) |
| Configuration | Dual N-Channel (half-bridge) | Dual N-Channel - same | Dual N-Channel - same | Dual N-Channel - same | Dual N-Channel - same | Dual N-Channel - same |
| Logic-Level Gate Drive (4.5V) | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- OptiMOS 3 platform provides industry-leading FOM at 30V (vs BSC059N04LS6ATMA1 (OptiMOS 5))
- True 30V Vds rating optimized for 12V bus applications (vs BSC032N04LSATMA1 (40V))
- Dual-FET array reduces PCB footprint by ~40% (vs Two discrete SO-8 MOSFETs)
- Logic-level 4.5V gate drive enables direct 5V MCU control (vs BSC0504NSIATMA1 (OptiMOS 5))
Design Notes
Estimated: at Id=20A and Rds(on)=4 mOhm (typical OptiMOS 3 30V), conduction loss is ~1.6W per FET. The PG-TDSON-8-4 package requires a minimum 1 oz copper pour of 1 square inch directly beneath the exposed pad to keep junction-to-ambient thermal resistance near 50 C/W. For continuous 20A operation, the junction temperature rise approaches 80C above ambient - use thermal vias to an internal copper plane for improved dissipation in high-current applications.
Keep the high-side FET gate loop (gate driver output to G1, source return through S1) under 5 mm total length to minimize parasitic inductance, which causes gate ringing and voltage overshoot. Place a 10-100 nF ceramic bypass capacitor close to the gate-driver supply pin (Vdrv) and a small series gate resistor (4.7-22 ohm) on each gate to dampen oscillations at >300 kHz switching. Symmetric layout between the two dice reduces imbalance in half-bridge configurations.
Do not exceed the ±20V Vgs absolute maximum - even brief gate overshoot from parasitic inductance can permanently damage the gate oxide. Use a TVS or gate-source zener clamp when driving from a high-current gate driver. The body diode of the low-side FET conducts during dead-time; if reverse-recovery losses are critical (>500 kHz), consider the BSC150N03LSGATMA1 variant or an external Schottky. Always verify the SOA curve for pulsed-load conditions, especially during startup inrush.
The PG-TDSON-8-4 land pattern should use 6 thermal vias (0.3 mm diameter) in the exposed pad area for efficient heat transfer to inner copper layers. Stitch the top and bottom ground/drain copper planes with additional vias around the device perimeter to reduce thermal impedance. Maintain at least 0.2 mm clearance between the drain pad and signal traces to comply with typical 30V creepage requirements for pollution degree 2.
Compliance Information
RoHS and halogen-free compliant per Infineon product page. Standard part is not AEC-Q100 qualified - consult Infineon for Q1 automotive-graded variants. Pb-free reflow profile per JEDEC J-STD-020.
