BSC155N06NDATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC155N06NDATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC155N06NDATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC155N06NDATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench) | Trench (OptiMOS 5, thin-wafer) |
| Configuration | Dual N-channel MOSFET array | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | β |
| MSL Level | 1 | 1 (unlimited) |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | β |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |