BSC155N06NDATMA1 vs BSC0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSC155N06NDATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC155N06NDATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon |
| Part Number | BSC155N06NDATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench) | Trench-gate OptiMOS 5 |
| Configuration | Dual N-channel MOSFET array | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | β |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | β |
| Product Family | β | OptiMOS 5 25V/30V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 50 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Rated | β | Yes |