BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC190N12NS3GATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N12NS3GATMA1
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 β Active
Specification Comparison
| Parameter | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A | 25 A |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at Tc | 69 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) | β |
| Body Diode | Integrated | β |
| RoHS Status | Compliant (JESD-609 Code e3) | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Configuration | Single with built-in diode | β |
| Series | β | OptiMOS 25V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |