BSL207SPH6327XTSA1 vs IRF7205TRPBF Comparison

Detailed side-by-side comparison of BSL207SPH6327XTSA1 by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSL207SPH6327XTSA1 IRF7205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.33 $0.18
FET Type P-Channel P-Channel MOSFET
Technology MOSFET (Metal Oxide) IR HEXFET (4th generation)
Drain to Source Voltage (VDS) -20 V β€”
Continuous Drain Current (ID) at 25C 6 A (Ta) β€”
Power Dissipation (PD) 2 W (Ta) β€”
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] β€”
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] β€”
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Package TSOP-6 (PG-TSOP6-6) SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Series OptiMOSβ„’ β€”
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant β€”
Pin Count 6 β€”
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) at TA=25Β°C β€” -4.6 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V β€” 70 mΞ©
On-Resistance RDS(on) max @ VGS=-4.5V β€” 130 mΞ©
Gate Threshold Voltage VGS(th) β€” -1.0 V to -3.0 V
Total Gate Charge Qg β€” 27 nC
Power Dissipation (TC=25Β°C) β€” 2.5 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
RoHS / Lead-Free β€” Lead-Free (PBF suffix), RoHS compliant
Packaging β€” Tape & Reel (TR suffix)

Datasheets & Resources

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