IRF7205TRPBF - P-Ch -30V -4.6A 70mΩ SO-8 MOSFET | Infineon
MPN: IRF7205TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.55 | $0.55 |
| 10 | $0.48 | $4.80 |
| 100 | $0.36 | $36.00 |
| 500 | $0.27 | $135.00 |
| 1,000 | $0.22 | $220.00 |
| 3,000 | $0.18 | $540.00 |
IRF7205TRPBF Overview
A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device that regulates power flow between drain and source terminals via an insulated gate. The IRF7205TRPBF belongs to the P-channel enhancement-mode sub-family, meaning the device is normally OFF at VGS = 0 and turns ON when a sufficiently negative gate-source voltage is applied (typically -10 V for full enhancement). Within the broader taxonomy, this part sits in: power MOSFET -> enhancement-mode P-channel MOSFET -> HEXFET -> surface-mount discrete semiconductor.
Key differentiating features include an advanced IR MOSFET process technology, ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching capability, lead-free plating, and an ultra-low threshold-gate charge of 27 nC (Qg) that minimizes driver losses. The 8-SO (SOIC-8) package provides a low thermal resistance path with copper-pad heatsinking on the PCB.
The fourth-generation HEXFET cell structure uses a vertical DMOS architecture with a deep-body source short and a refined trench-style gate that achieves the lowest on-resistance per unit silicon area in the -30 V P-channel class. The 27 nC Qg specification enables switching frequencies well above 1 MHz when driven by a standard CMOS gate driver.
Typical applications include high-side load switches, DC-DC synchronous-rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and motor-drive half-bridges in industrial automation. The -30 V rating suits 12 V automotive rails and 24 V industrial supply systems with adequate transient margin.
A critical design consideration is that the SO-8 package has limited continuous current capacity above approximately 2 A without substantial copper-pad heatsinking; for 4.6 A operation, the PCB pad must be designed as a thermal land with thermal vias to inner-plane copper.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
Drop-in alternatives for IRF7205TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7205TRPBF (same form factor and footprint) — differing in Technology, Operating Temperature Range, Package, Lead-Free / RoHS, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7205PBF
✅ Drop-In✓ In Stock
$0.47 / Unit
View Datasheet →IRF7207TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7319TRPBF
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →Si2309DS
✅ Drop-In📋 Reference alternative (not in catalog)
AO3401A
✅ Drop-In📋 Reference alternative (not in catalog)
BSL207SPH6327XTSA1
✅ Drop-In✓ In Stock
$0.33 / Unit
View Datasheet →IRF7205TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel MOSFET |
| Technology | IR HEXFET (4th generation) |
| Drain-to-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) at TA=25°C | -4.6 A |
| On-Resistance RDS(on) max @ VGS=-10V | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | 130 mΩ |
| Gate Threshold Voltage VGS(th) | -1.0 V to -3.0 V |
| Total Gate Charge Qg | 27 nC |
| Power Dissipation (TC=25°C) | 2.5 W |
| Operating Junction Temperature | -55 °C to +150 °C |
| Package | SO-8 (8-SO) |
| Mounting Type | Surface Mount |
| RoHS / Lead-Free | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | Tape & Reel (TR suffix) |
IRF7205TRPBF Pin Configuration
| Pin 1 | Source — Source terminal (P-channel) |
| Pin 2 | Source — Source terminal (P-channel) |
| Pin 3 | Source — Source terminal (P-channel) |
| Pin 4 | Gate — Gate control input (drive negative to turn on) |
| Pin 5 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pin 6 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pin 7 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pin 8 | Drain — Drain terminal (P-channel), thermally connected to pads |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IRF7205TRPBF is suitable for 6 applications: 12V Automotive High-Side Load Switch, Battery Protection / Reverse-Polarity Blocking, DC-DC Synchronous Rectifier Replacement, Industrial 24V Power-Rail Switching, USB Power Switch / Hot-Plug Controller, Motor-Drive Half-Bridge Stage.
12V Automotive High-Side Load Switch
The IRF7205TRPBF is a strong fit for 12V automotive high-side load switching where its -30V VDS rating provides margin above 12V nominal plus load-dump transients. With 70 mΩ Rds(on) at VGS=-10V and -4.6A continuous current capability, the device keeps conduction losses below 200 mW at 2 A continuous load, suiting it for driving automotive lamps, solenoids, and small motors where the P-channel topology eliminates the need for a bootstrap circuit and lets a low-side gate-driver MOSFET pull the IRF7205TRPBF gate to ground for turn-on.
Recommended
Battery Protection / Reverse-Polarity Blocking
For battery protection and reverse-polarity blocking in portable and handheld equipment, the IRF7205TRPBF's P-channel enhancement-mode behavior is ideal because it conducts when the gate is pulled below ground by the load. The 70 mΩ Rds(on) minimizes voltage drop during discharge, while the -30V VDS protects against reversed-battery transients when a Schottky TVS clamps the surge. The SO-8 footprint enables compact PCB designs and the 27 nC total gate charge allows fast disconnect response (<1 μs) under battery-fault conditions.
Recommended
DC-DC Synchronous Rectifier Replacement
The IRF7205TRPBF can replace the synchronous-rectifier MOSFET in low-power buck converters operating below 4A continuous output where P-channel high-side switching simplifies gate drive by eliminating the bootstrap network. Its 70 mΩ Rds(on) at -10V VGS keeps synchronous-rectifier conduction loss below 4% at 3A output, and the 27 nC Qg enables switching frequencies above 500 kHz with standard CMOS gate drivers. The SO-8 package's thermal pad supports sustained operation at 2-3A continuous when PCB copper pours are designed correctly.
Recommended
Industrial 24V Power-Rail Switching
For industrial 24V power-rail switching and signal-line multiplexing, the IRF7205TRPBF's -30V VDS rating provides 25% headroom above the 24V nominal bus, withstanding inductive kickback from relays and solenoids on the load side. The P-channel high-side configuration lets a microcontroller I/O pin drive the gate directly through a pull-up resistor, eliminating the high-voltage gate-drive circuitry required by N-channel high-side switches. The 4.6A continuous capability covers most PLC output and sensor-power rail applications in industrial automation.
Recommended
USB Power Switch / Hot-Plug Controller
The IRF7205TRPBF functions as a USB power-distribution switch where its P-channel high-side topology and -4.6A current capability comfortably exceed the USB 3.0 900 mA and USB-C 1.5 A specification limits. The 70 mΩ Rds(on) creates less than 100 mV drop at 1.5 A, well within USB voltage-tolerance specifications, and the fast-switching 27 nC Qg enables sub-microsecond turn-on that prevents inrush surges when downstream bulk capacitors charge. SO-8 surface-mount assembly suits compact hub designs.
Recommended
Motor-Drive Half-Bridge Stage
In small DC-motor half-bridge and brushed-DC motor-driver stages for robotics and small appliances, the IRF7205TRPBF serves as the high-side switch in a complementary half-bridge with an N-channel low-side MOSFET. The -30V VDS rating handles 12V motor back-EMF transients, while 70 mΩ Rds(on) limits conduction loss during PWM commutation at duty cycles up to 95%. The 27 nC Qg supports PWM frequencies above 25 kHz, placing switching noise above the audible range for quiet motor operation.
Recommended
Recommended Products Summary
Engineering reference data for IRF7205TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7205PBF | IRF7207TRPBF | Si2309DS | AO3401A |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | Alpha & Omega Semiconductor |
| Package | SO-8 (8-SO) | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage VDS | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous Drain Current (TA=25°C) | -4.6 A | -4.6 A | -6.5 A | -3.6 A | -4.0 A |
| On-Resistance Rds(on) @ VGS=-10V | 70 mΩ | 70 mΩ | 60 mΩ | 52 mΩ | 50 mΩ |
| Power Dissipation (TC=25°C) | 2.5 W | 2.5 W | 2.5 W | 1.7 W | 1.4 W |
| Unit Price (qty 1, USD) | 0.55 | 0.55 | 0.65 | 0.40 | 0.18 |
Key Differentiators
- Lowest cost per mΩ in the SO-8 -30V P-channel class (vs AO3401A)
- Industry-standard IR HEXFET fourth-generation process (vs Si2309DS)
- Higher continuous current than typical SO-8 P-channel parts (vs Si2309DS)
Design Notes
Estimated: at 4.6 A continuous and VGS=-10V drive, conduction loss is approximately 1.5 W (I² × R = 4.6² × 0.07 = 1.48 W). The SO-8 package's theta_JA is approximately 50 °C/W on a 1-square-inch copper pad, giving a junction temperature rise of 75 °C above ambient. Above 3 A continuous load, use a maximum copper-pad area of at least 1 square inch with thermal vias to inner planes; this is the most common design pitfall when migrating from D2PAK to SO-8.
Lay out the SO-8 footprint with a continuous thermal pad (Exposed Pad) under pins 5-6-7-8 connected to a copper pour of at least 1 square inch. Add 0.3 mm thermal vias in a 1.2 mm pitch grid stitching the top copper pour to the inner ground plane. The gate trace should be kept short (<10 mm) and routed away from switching drain traces to minimize dv/dt-induced gate bounce. Per Infineon's SO-8 layout application note, vias-in-pad are acceptable but require filled-and-plated-over via process to prevent solder wicking.
Do not exceed -20V VGS (the absolute-maximum gate-source voltage); use a 12V Zener clamp across gate-source if the gate-drive signal can overshoot. Do not parallel multiple IRF7205TRPBF devices without individual gate-source resistors because the negative-temperature-coefficient of Rds(on) at high currents can cause thermal runaway. Avoid operating at VDS > -24V for sustained periods to stay below 80% of the -30V rating and provide margin against automotive load-dump transients.
Compliance Information
Pb-free per PBF suffix, RoHS compliant per Infineon product page. Not AEC-Q100 qualified - automotive AEC-Q100 applications should consider AEC-Q100-qualified alternatives or perform additional qualification testing.
