BSL215CH6327XTSA1 vs BSL308PEH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL215CH6327XTSA1 by Infineon and BSL308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL215CH6327XTSA1
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 β Active
Specification Comparison
| Parameter | BSL215CH6327XTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS |
| FET Type | N-Channel and P-Channel Complementary Pair | 2x P-Channel (Dual) |
| Drain-Source Voltage (V_DS) | 20 V | β |
| Continuous Drain Current (I_D) | 1.5 A | β |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Power Dissipation (P_D) | 500 mW | β |
| Package / Case | PG-TSOP6-6 (6-pin TSOP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C | -55 C to +150 C (TJ) |
| Configuration | Half-bridge (1 N + 1 P) | Dual, common source |
| Technology | OptiMOS trench MOSFET | β |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) | β | -2 A (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| Package | β | PG-TSOP6-6 (TSOT-23-6) |
| Automotive Qualification | β | AEC-Q101 |
| Number of Pins | β | 6 |
| Channel Mode | β | Enhancement |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |