BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
MPN: BSL215CH6327XTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.52 | $0.52 |
| 10 | $0.46 | $4.60 |
| 100 | $0.38 | $38.00 |
| 500 | $0.31 | $155.00 |
| 1,000 | $0.26 | $260.00 |
| 3,000 | $0.21 | $630.00 |
BSL215CH6327XTSA1 Overview
A MOSFET array (sometimes called a complementary or half-bridge pair) is a power-management semiconductor that pairs an N-channel and a P-channel FET in a single package to simplify push-pull output stages, level shifters, and synchronous rectification in compact designs. The complementary structure belongs to the broader hierarchy of MOSFETs -> discrete semiconductors -> power transistors -> active components. By integrating both channels, designers reduce PCB area, parasitic loop inductance, and BOM count compared with discrete implementations.
Key features include a 20 V drain-source breakdown voltage suitable for 12 V rail switching, 1.5 A continuous drain current capability, low gate threshold voltage optimized for 2.5 V/3.3 V logic-level drive, and a typical on-resistance profile that keeps conduction losses small in portable and battery-powered applications. The OptiMOS cell structure provides fast switching transitions that minimize switching losses in DC-DC conversion.
The N-channel and P-channel dies share an advanced trench process, with the P-channel specifically engineered to mirror the N-channel's low R_DS(on) and figure-of-merit (FOM) characteristics. This technology alignment ensures symmetric switching performance, which is critical for half-bridge and synchronous buck topologies where channel mismatch can cause shoot-through or uneven duty cycles.
Typical applications include load switching in portable devices, power management for wearables and IoT sensors, battery protection circuits, USB power switching, audio amplifier output stages, and small motor driver bridges. The device is also suitable for level shifting between low-voltage MCUs and higher-voltage peripheral loads.
When designing with the BSL215CH6327XTSA1, ensure both MOSFET gates are driven within their maximum V_GS ratings (typically +/-12 V absolute, +/-8 V recommended). For the P-channel, the gate must be pulled below the source to enhance, which means a charge-pump or low-side driver is unnecessary - a simple logic-level signal works when the source sits at the rail.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and cross-brand equivalents, plus practical thermal and PCB layout notes not collected in any single manufacturer document.
Drop-in alternatives for BSL215CH6327XTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSL215CH6327XTSA1 (same form factor and footprint) β differing in Package, FET Type, Technology, Automotive Qualification, Configuration.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSL215CH6327XTSA2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSL308PEH6327XTSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.21 / Unit
View Datasheet βBSS316NH6327XTSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.13 / Unit
View Datasheet βNTMD6N02R2G
β Drop-Inπ Reference alternative (not in catalog)
SI4501DY
β Drop-Inπ Reference alternative (not in catalog)
FDS8958A
β Drop-Inπ Reference alternative (not in catalog)
BSL215CH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (V_DS) | 20 V |
| Continuous Drain Current (I_D) | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm |
| Power Dissipation (P_D) | 500 mW |
| Package / Case | PG-TSOP6-6 (6-pin TSOP) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C |
| Configuration | Half-bridge (1 N + 1 P) |
| Technology | OptiMOS trench MOSFET |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSL215CH6327XTSA1 Pin Configuration
| Pin 1 | G1 β N-channel Gate |
| Pin 2 | S1 β N-channel Source |
| Pin 3 | D1 β N-channel Drain |
| Pin 4 | D2 β P-channel Drain |
| Pin 5 | S2 β P-channel Source |
| Pin 6 | G2 β P-channel Gate |
Typical Applications
BSL215CH6327XTSA1 is suitable for 6 applications: Portable Device Load Switching, Synchronous Buck DC-DC Converter, IoT Sensor Power Management, Audio Amplifier Output Stage, USB Power Path Management, Small Motor Driver Bridge.
Portable Device Load Switching
The BSL215CH6327XTSA1 is ideal for load switching in battery-powered portable devices such as smartphones, tablets, and wearables. The integrated N+P pair enables high-side P-channel switching with a single logic-level signal without a charge pump, while the N-channel can be used for low-side synchronous rectification. With 1.5 A continuous current per channel and 20 V V_DS, it handles USB VBUS (5 V), battery rails (3.7-4.2 V), and 12 V peripheral supplies. The 250 mOhm R_DS(on) limits conduction loss to ~38 mW at 500 mA, preserving battery runtime. Compared with discrete dual-MOSFET designs, the TSOP-6 package cuts PCB footprint by ~40 percent and reduces BOM count from two parts to one.
Recommended
Synchronous Buck DC-DC Converter
The BSL215CH6327XTSA1 forms the high-side and low-side switches of a synchronous buck converter in compact step-down regulators. The N-channel serves as the low-side synchronous rectifier, while the P-channel acts as the high-side control switch - eliminating the need for a bootstrap circuit or high-side driver IC. With 20 V V_DS the device comfortably handles 5 V and 12 V input rails, and the matched OptiMOS cell structure ensures balanced switching delays that prevent shoot-through. At 1.5 A load capability, it is well suited for point-of-load regulation on FPGA boards, MCU cores, and IoT sensor nodes. The 250 mOhm R_DS(on) at V_GS=4.5 V keeps full-load efficiency above 90 percent at moderate duty cycles.
Recommended
IoT Sensor Power Management
In IoT sensor hubs and edge nodes, the BSL215CH6327XTSA1 enables ultra-low-power sleep modes by providing matched high-side P-channel load switches and N-channel control logic in a single 2.9 mm x 1.6 mm TSOP-6 package. The 500 mW dissipation rating handles sensor bursts during wake cycles, and the 20 V rating provides margin for energy-harvesting inputs that may transiently spike. With 1.5 A capability, it can power radio modules, MEMS sensors, and display backlights. The complementary pair simplifies bidirectional power path management between battery and USB sources, a common requirement in always-on IoT designs. Designers benefit from the OptiMOS cell's low gate charge, which minimizes quiescent drive current in standby.
Recommended
Audio Amplifier Output Stage
The BSL215CH6327XTSA1 powers compact Class-D and headphone amplifier output stages where matched N+P switching is essential for low distortion. The N-channel drives one output rail while the P-channel drives the complementary rail, creating a push-pull totem pole that delivers high-fidelity audio with minimal dead-zone distortion. The 1.5 A capability supports headphone impedances down to 32 ohms at moderate volumes, while the 20 V rating provides headroom for +-9 V audio rails. The OptiMOS trench process ensures fast switching edges that keep THD+N below audible thresholds in the 20 Hz-20 kHz audio band. The matched thermal performance between channels prevents DC offset drift that can damage headphones over time.
Recommended
USB Power Path Management
The BSL215CH6327XTSA1 implements USB VBUS power-path switching in USB-C, USB-PD, and USB-A peripherals. The P-channel acts as the high-side load switch controlled directly by the system MCU without a charge pump, while the N-channel handles reverse-current blocking or provides a synchronous ground return. With 20 V V_DS the part handles USB-PD voltages up to 12 V standard mode and survives 20 V extended power range transients. The 1.5 A continuous rating suits USB 3.0 downstream ports and most Type-C applications below 15 W. Low R_DS(on) of 250 mOhm keeps VBUS drop below 100 mV at 500 mA, preserving voltage margins for downstream charging circuits.
Recommended
Small Motor Driver Bridge
The BSL215CH6327XTSA1 serves as a compact half-bridge driver for small DC motors, fans, and solenoids under 1.5 A. The N-channel pulls one motor terminal low while the P-channel pulls the other high, enabling forward rotation; reversing the gate drive signals reverses direction. The 20 V rating supports 12 V brushed motors and 5 V micro-servos, while the matched R_DS(on) ensures symmetric drive strength that prevents motor cogging. In haptic feedback applications and small BLDC fans, the matched OptiMOS switching speeds reduce EMI by minimizing voltage overshoot at the motor terminals. The 500 mW dissipation handles intermittent stall currents typical of small gear motors.
Recommended
Recommended Products Summary
Engineering reference data for BSL215CH6327XTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSL215CH6327XTSA2 | BSL308PEH6327XTSA1 | BSS316NH6327XTSA1 | NTMD6N02R2G | SI4501DY |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay |
| Package | PG-TSOP6-6 | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same | SO-8 - pin-equivalent | SO-8 - pin-equivalent |
| Configuration | N+P Complementary | N+P Complementary | P-channel only (single) | N-channel only (single) | N+P Complementary | N+P Complementary |
| Drain-Source Voltage V_DS | 20 V | 20 V | 30 V | 30 V | 20 V | 20 V |
| Continuous Drain Current | 1.5 A | 1.5 A | 2.0 A | 1.5 A | 2.5 A | 3.0 A |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | 250 mOhm | 150 mOhm | 60 mOhm | 200 mOhm | 50 mOhm |
| Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 830 mW | 2000 mW |
| Technology | OptiMOS trench | OptiMOS trench | OptiMOS trench | OptiMOS trench | onsemi TMOS | Vishay TrenchFET |
Key Differentiators
- Complementary N+P integration in one TSOP-6 package (vs Discrete BSS316N + BSS84P combination)
- OptiMOS trench technology for low FOM (vs Older planar MOSFETs like 2N7002 + BSS84)
- 20 V V_DS with 1.5 A continuous rating in TSOP-6 (vs SI4501DY in larger SO-8 package)
Design Notes
Estimated: At continuous 1.5 A load with V_DS drop of 333 mV, each channel dissipates roughly 500 mW - the package's rated maximum. With copper-pour area of 1 square inch on a standard 1 oz FR-4 PCB, the TSOP-6 thermal resistance is approximately 150 C/W, yielding a 75 C temperature rise above ambient. Designers should either reduce continuous current to ~1 A or expand the copper pour to 2-3 square inches to keep junction temperature below 110 C. Above 1.5 A pulsed operation is acceptable provided average dissipation remains under 500 mW.
Place both gate-drive resistors (typically 10-100 ohm) within 3 mm of the gate pins to suppress parasitic ringing from the gate-source capacitance. The exposed thermal pad must be soldered to a copper pour on the top layer to provide the only thermal path; vias to internal ground planes improve heat spreading but should be placed outside the pad perimeter to avoid solder wicking. Keep the drain and source traces short and wide to minimize parasitic inductance that causes voltage overshoot during switching.
Do not exceed the absolute maximum gate-source voltage of +/-12 V, even briefly - ESD events on the gate pin are the most common failure mode for small-signal MOSFETs. For the P-channel, ensure the gate is actively driven low to enhance; a floating gate can partially turn on the device and cause unwanted current flow. Avoid paralleling the N-channel and P-channel outputs directly without proper dead-time control in half-bridge applications to prevent shoot-through currents that exceed the 500 mW dissipation limit.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Halogen-free per IEC 61249-2-21. Not AEC-Q100 qualified - use automotive-grade MOSFETs for vehicle applications. Lead-free reflow soldering compatible with JEDEC J-STD-020 peak temperature of 260 C.
