BSL215CH6327XTSA1 vs BSS316NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL215CH6327XTSA1 by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL215CH6327XTSA1
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 β Active
Specification Comparison
| Parameter | BSL215CH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.13 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 20 V | β |
| Continuous Drain Current (I_D) | 1.5 A | β |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Power Dissipation (P_D) | 500 mW | β |
| Package / Case | PG-TSOP6-6 (6-pin TSOP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C | β |
| Configuration | Half-bridge (1 N + 1 P) | β |
| Technology | OptiMOS trench MOSFET | OptiMOS 2 (Trench) |
| MSL Level | 1 (unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 1.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | β | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | β | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | β | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | β | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | β | 500 mW |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Package | β | PG-SOT23 (SOT-23-3) |
| Lead Plating | β | Pb-free (Matte Tin) |
| Automotive Qualification | β | AEC-Q101 qualified |