BSL215CH6327XTSA1 vs IRLL2705TRPBF Comparison
Detailed side-by-side comparison of BSL215CH6327XTSA1 by Infineon and IRLL2705TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 β Active
Specification Comparison
| Parameter | BSL215CH6327XTSA1 | IRLL2705TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.22 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| FET Type | N-Channel and P-Channel Complementary Pair | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (V_DS) | 20 V | β |
| Continuous Drain Current (I_D) | 1.5 A | β |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Power Dissipation (P_D) | 500 mW | β |
| Package / Case | PG-TSOP6-6 (6-pin TSOP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C | β |
| Configuration | Half-bridge (1 N + 1 P) | β |
| Technology | OptiMOS trench MOSFET | HEXFET (IR MOSFET fifth generation) |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at 25 deg C | β | 3.8 A |
| Peak Drain Current (IDM, pulsed) | β | 5.2 A |
| RDS(on) max at VGS=10V | β | 40 mOhm |
| Total Gate Charge (Qg) | β | 32 nC |
| Gate Drive Level | β | Logic-Level |
| Power Dissipation at TA=25 deg C | β | 1 W (Ta), 2.1 W (per LCSC listing) |
| Operating Temperature Range | β | -55 deg C to +175 deg C |
| Package | β | SOT-223 |
| Dynamic dv/dt Rating | β | Yes |