BSL308PEH6327XTSA1 vs BSS192PH6327FTSA1 Comparison
Detailed side-by-side comparison of BSL308PEH6327XTSA1 by Infineon and BSS192PH6327FTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308PEH6327XTSA1 | BSS192PH6327FTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.34 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | SIPMOS Small-Signal-Transistor |
| FET Type | 2x P-Channel (Dual) | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (ID) | -2 A (Ta) | β |
| Power Dissipation (PD) | 500 mW (Ta) | β |
| Package | PG-TSOP6-6 (TSOT-23-6) | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) |
| Configuration | Dual, common source | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per distributor listing) |
| Number of Pins | 6 | β |
| Channel Mode | Enhancement | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | β |
| RoHS Status | Compliant | [DATA_NEEDED: explicit RoHS status from datasheet] |
| Technology | β | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | β | 250 V |
| Continuous Drain Current (Id) @ 25C | β | 190 mA (Ta) |
| Power Dissipation (Pd) | β | 1 W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | β | 2.8 V, 10 V |
| Rds On (Max) @ Id, Vgs | β | [DATA_NEEDED: Rds On max @ Vgs] |
| Vgs(th) (Max) | β | [DATA_NEEDED: gate threshold voltage max] |
| Vgs(th) (Typ) | β | [DATA_NEEDED: gate threshold voltage typ] |
| Operating Temperature Range | β | [DATA_NEEDED: Tj max / operating temp] |
| Part Status | β | Active |