BSS192PH6327FTSA1 - P-Ch 250V 190mA MOSFET SOT-89 | Infineon
MPN: BSS192PH6327FTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.46 | $46.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.34 | $340.00 |
BSS192PH6327FTSA1 Overview
A P-channel MOSFET (P-FET) is a metal-oxide-semiconductor field-effect transistor in which the source-to-drain current is conducted by majority holes when a negative gate-to-source voltage is applied. P-channel devices sit in the hierarchy small-signal MOSFET -> MOSFET -> discrete semiconductor -> active component, and they are commonly chosen for high-side switching because they can be turned on by pulling the gate toward ground, simplifying gate drive in systems where only a positive rail is available.
Key features of the BSS192PH6327FTSA1 include its 250 V drain-to-source breakdown, 190 mA continuous drain current at 25 C ambient, and the SOT-89 (PG-SOT89) outline whose center tab provides a low thermal resistance path to a PCB copper pad. The part is qualified to AEC-Q101, making it appropriate for automotive electronics, and is supplied on tape and reel for high-volume SMT assembly lines. Drive voltage is specified at 2.8 V (Max Rds On) and 10 V (Min Rds On).
Architecturally, the device uses Infineon's SIPMOS planar cell technology, which optimizes the trade-off between on-resistance, switching speed, and ruggedness. With its 250 V rating and modest 190 mA current, the BSS192PH6327FTSA1 targets applications where the design needs a P-channel high-side switch or a level shifter that tolerates wide input rails - including offline bias circuits, relay driver front-ends, and small-signal analog switching blocks.
Typical applications include high-side load switching in industrial controllers, automotive body and lighting modules, signal-source multiplexing in test equipment, level shifting between low-voltage microcontrollers and high-voltage rails, and reverse-polarity / over-voltage protection circuits. The combination of 250 V blocking and SOT-89 footprint also makes it useful as a discrete switch inside power-supply start-up or hold-up paths.
Designers should note that for sustained DC conduction the SOT-89 center tab must be soldered to a sufficiently large copper area to keep junction temperature within safe limits. Because the device is P-channel and enhancement-mode, a pull-up resistor on the gate is typically required to keep it off when the driver is in a high-impedance state.
This page consolidates distributor pricing, parametric comparison data, and application notes to give engineers a single reference point beyond the manufacturer datasheet for design-in, sourcing, and second-source decisions.
Drop-in alternatives for BSS192PH6327FTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS192PH6327FTSA1 (same form factor and footprint) β differing in Package, FET Type, Continuous Drain Current (ID), Technology, Drain-Source Voltage (VDS).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSS192PH6327FTSA1
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View Datasheet βBSP88H6327XTSA1
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View Datasheet βBSL308PEH6327XTSA1
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View Datasheet βBSS205NH6327XTSA1
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View Datasheet βBSS192PH6327FTSA1 Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 250 V |
| Continuous Drain Current (Id) @ 25C | 190 mA (Ta) |
| Power Dissipation (Pd) | 1 W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V, 10 V |
| Package | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 (per distributor listing) |
| Series | SIPMOS Small-Signal-Transistor |
| Part Status | Active |
BSS192PH6327FTSA1 Pin Configuration
| Pin 1 | Gate β Gate control input - drive low (relative to Source) to turn on |
| Pin 2 | Source β Source terminal - reference for Vgs and main current path |
| Pin 3 | Drain β Drain terminal - connected to high-side load or supply rail |
| Pin 4 | Drain (Tab) β Drain thermal pad - tied to pin 3 electrically; solder to PCB copper for heatsinking |
Safe Operating Area (estimated, SOT-89 1 W limit)
Typical Applications
BSS192PH6327FTSA1 is suitable for 6 applications: High-Side Load Switch in Industrial Control, Automotive Body Electronics and Lighting, Level Shifter Between MCU and High-Voltage Rail, Signal Multiplexing in Test and Measurement, Reverse-Polarity and Over-Voltage Protection, Offline Bias and Start-Up Path in Power Supplies.
High-Side Load Switch in Industrial Control
The BSS192PH6327FTSA1 fits high-side load-switching in industrial controllers where 24 V-48 V rails must be gated by a 3.3 V or 5 V microcontroller. With 250 V Vdss it tolerates wide industrial transients and inductive kick-back, while its P-channel enhancement-mode gate drive allows direct connection to a low-voltage MCU GPIO - no charge pump required. The SOT-89 footprint keeps the switch close to the load and its 190 mA rating suits pilot relays, optocouplers, sensor excitation, and small solenoid valves typically found in PLC and HMI front-ends.
Recommended
Automotive Body Electronics and Lighting
With AEC-Q101 qualification, the BSS192PH6327FTSA1 is well suited to automotive body and lighting modules - interior lamp drivers, indicator LED strings, and small actuator control. Its 250 V blocking voltage gives substantial margin against load-dump transients on 12 V and 24 V automotive buses, and the 190 mA continuous rating covers pilot-stage switching that subsequently drives a smart high-side FET. The SOT-89 package supports miniaturized ECU layouts where thermal relief copper is readily available on inner PCB layers.
Recommended
Level Shifter Between MCU and High-Voltage Rail
The BSS192PH6327FTSA1 acts as a discrete level shifter between a 3.3 V or 5 V microcontroller and a higher-voltage analog rail. Because it is P-channel and enhancement-mode, pulling its gate low through a resistor network from the MCU turns it on, connecting the high-side rail to a downstream stage; releasing the gate to the high rail turns it off. This topology is widely used to interface low-voltage logic to vacuum-tube circuits, piezo drivers, and analog signal sources that operate above the MCU supply.
Recommended
Signal Multiplexing in Test and Measurement
The BSS192PH6327FTSA1 can serve as an analog signal multiplexer in test equipment, switching low-current signal paths up to its 250 V blocking rating. Its low on-resistance and P-channel configuration simplify input switching on the high-side of a multiplexer tree, where the part's small SOT-89 outline helps achieve high channel density on the front-end board. The 190 mA rating is more than adequate for signal-level current, and the wide Vdss permits switching of AC-coupled measurement signals.
Recommended
Reverse-Polarity and Over-Voltage Protection
In reverse-polarity and over-voltage protection blocks, the BSS192PH6327FTSA1 can be wired to block or shunt unwanted voltage excursions on a supply rail. Its 250 V Vdss gives designers headroom to design protection stages that clamp transients well above the nominal rail, while the SOT-89 tab can be tied directly to the protected node as a thermal path for absorbed surge energy. P-channel orientation in some topologies allows the part to disconnect a downstream load from a miswired supply.
Recommended
Offline Bias and Start-Up Path in Power Supplies
The BSS192PH6327FTSA1 is well suited to offline bias and start-up paths in small switch-mode power supplies, where a high-blocking P-channel MOSFET is used to inject initial start-up current from the rectified mains rail into a controller's Vcc pin. The 250 V Vdss covers universal input (85-265 VAC) rectified rails with margin, and the 190 mA rating provides sufficient start-up bias current for low-power auxiliary supplies. After start-up, the MOSFET is turned off and the auxiliary winding takes over, reducing losses.
Recommended
Recommended Products Summary
Engineering reference data for BSS192PH6327FTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSP315PH6327XTSA1 | BSP316PH6327XTSA1 | BSP88H6327XTSA1 | BSL308PEH6327XTSA1 | BSS205NH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT89 (3+Tab) | PG-SOT89 (3+Tab) - same | PG-SOT89 (3+Tab) - same | PG-SOT89 (3+Tab) - same | PG-SOT89 (3+Tab) - same | PG-SOT89 (3+Tab) - same |
| FET Type | P-Channel | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Continuous Id @ 25C | 190 mA | Higher (~1 A class) | Higher (~1 A class) | Higher (~300 mA class) | Higher (~2 A class) | Higher (~1 A class) |
| Power Dissipation (Ta) | 1 W | 1 W (same package) | 1 W (same package) | 1 W (same package) | 1 W (same package) | 1 W (same package) |
| Series / Family | SIPMOS Small-Signal | SIPMOS Small-Signal (P-FET) | SIPMOS Small-Signal (P-FET) | SIPMOS Small-Signal (N-FET) | OptiMOS (N-FET) | SIPMOS Small-Signal (N-FET) |
| Polarity / Drive for High-Side | P-channel (low-side gate drive) | P-channel (low-side gate drive) | P-channel (low-side gate drive) | N-channel (needs high-side gate drive) | N-channel (needs high-side gate drive) | N-channel (needs high-side gate drive) |
Key Differentiators
- Highest blocking voltage in SOT-89 P-channel small-signal class (vs BSP315PH6327XTSA1)
- AEC-Q101 qualified for automotive designs (vs BSP88H6327XTSA1)
- P-channel polarity simplifies high-side gate drive from low-voltage MCU (vs BSL308PEH6327XTSA1)
Design Notes
The SOT-89 package dissipates 1 W at 25 C ambient, but realistic operation in free air without copper typically limits Pd to ~0.5 W. Estimated: with a 1 oz copper pour of 100 mm^2 on the drain tab, theta_JA drops to roughly 80 C/W, supporting ~1 W dissipation up to 50 C ambient before Tj_max. For continuous 190 mA at elevated temperatures, always check the derating curve and confirm tab soldering.
The center tab (Drain) of the SOT-89 must be soldered to a copper pad on the PCB for both electrical connection and thermal dissipation. Use a pad pattern matching Infineon's SOT-89 land recommendation - typically a minimum 25 mm^2 thermal pad with multiple thermal vias to inner copper planes. This will reduce junction temperature significantly under continuous-load conditions and improve long-term reliability.
As a P-channel enhancement-mode device, the BSS192PH6327FTSA1 requires a pull-up resistor from gate to source if the driving node can float - otherwise the part may partially turn on from leakage or noise, causing heat and unintended conduction. Also confirm that Vgs(th) and full-enhancement Vgs match your logic rail: 2.8 V spec for low-Rds On may not be met by 1.8 V MCUs without level shifting.
Route the gate trace away from the drain switching node to minimize dv/dt-induced turn-on through Miller capacitance. For switching frequencies above 100 kHz, place a small gate resistor (10-100 ohm) in series with the gate driver to damp ringing and limit peak gate current. Keep source and drain loops short to reduce parasitic inductance, especially in offline circuits where dv/dt can exceed 1 kV/us.
Compliance Information
AEC-Q101 (automotive MOSFET qualification) confirmed via distributor listings (Arrow, Jotrin). RoHS / REACH / lead-free / halogen-free status not explicitly listed in the verified web data; consult the manufacturer datasheet before production sign-off.
