BSL316CH6327XTSA1 vs BSS316NH6327XTSA1 Comparison

Detailed side-by-side comparison of BSL316CH6327XTSA1 by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSL316CH6327XTSA1

BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 βœ“ Active
Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSL316CH6327XTSA1 BSS316NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $0.13
Manufacturer Infineon Technologies β€”
Part Family OptiMOS small-signal complementary MOSFET β€”
Configuration Complementary pair (1 N-channel + 1 P-channel in one package) β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel ID) 1.4 A β€”
Continuous Drain Current (P-channel ID) 1.5 A β€”
Total Power Dissipation (Ptot) 500 mW β€”
Package PG-TSOP6-6 (TSOP6, 6-pin) PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Technology OptiMOS low-voltage MOSFET OptiMOS 2 (Trench)
Channel Type N-channel + P-channel (dual) β€”
Pin Count 6 β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] MSL1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] β€”
FET Type β€” N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TA=25C β€” 1.4 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max β€” 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ β€” 2 V at ID=3.7 uA
Total Gate Charge (Qg) β€” 600 pC at VGS=5 V
Input Capacitance (Ciss) β€” 94 pF at VDS=15 V
Output Capacitance (Coss) β€” [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C β€” 500 mW
Operating Junction Temperature Range β€” -55 C to +150 C
Lead Plating β€” Pb-free (Matte Tin)
Automotive Qualification β€” AEC-Q101 qualified

Datasheets & Resources

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