BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon
MPN: BSL316CH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.42 | $42.00 |
| 500 | $0.35 | $175.00 |
| 1,000 | $0.28 | $280.00 |
| 3,000 | $0.22 | $660.00 |
BSL316CH6327XTSA1 Overview
A complementary MOSFET pair is a discrete component grouping that places one n-channel and one p-channel enhancement-mode MOSFET in the same package, sharing gate-drive ground references. This topology eliminates the need for level-shifting circuitry and bootstrap capacitors in half-bridge or H-bridge designs, simplifying gate drive, reducing board area, and synchronizing switching transitions for cleaner edges in motor control and audio amplifier output stages.
The BSL316C leverages Infineon's OptiMOS low-voltage process technology, delivering low on-state resistance per silicon area and fast switching characteristics suitable for DC-DC conversion, power management, and load switching. The complementary configuration allows designers to build efficient push-pull output stages, full H-bridge motor drivers, level shifters, and analog signal switching paths from one compact package. The PG-TSOP6-6 footprint maintains compatibility with standard JEDEC TSOP6 land patterns, enabling drop-in PCB layout reuse for either polarity of MOSFET.
Typical applications include small motor drive circuits in consumer appliances, USB Type-C power switching, signal multiplexing in portable equipment, level translation between logic domains, low-side/high-side synchronous rectification, and general-purpose load switching in battery-powered devices. The compact footprint is particularly suited for space-constrained designs such as wearables, IoT sensor nodes, and portable instrumentation.
When designing with this device, ensure gate-source voltages remain within the absolute maximum ratings of typically +/-8 V (verify against datasheet) for the n-channel and p-channel devices. Place gate drive resistors (typically 10-100 ohms) close to the device pins to limit ringing, and verify thermal performance with the 500 mW total package dissipation budget at the operating ambient temperature.
This page synthesizes distributor pricing as of 2026-09-10, drop-in TSOP6 alternatives, application notes, and design considerations not found in the manufacturer datasheet alone, including same-Infineon TSOP6 complementary pairs and cross-brand pin-compatible equivalents sourced from the verified cross-reference data.
Drop-in alternatives for BSL316CH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSL316CH6327XTSA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), MSL Level, Technology, Package, Continuous Drain Current (ID).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSL215CH6327XTSA1
✅ Drop-In✓ In Stock
$0.21 / Unit
View Datasheet →BSS123NH6327XTSA1
✅ Drop-In✓ In Stock
$0.085 / Unit
View Datasheet →BSS316NH6327XTSA1
✅ Drop-In✓ In Stock
$0.13 / Unit
View Datasheet →BSS806NEH6327XTSA1
✅ Drop-In✓ In Stock
$0.14 / Unit
View Datasheet →BSS308PEH6327XTSA1
✅ Drop-In✓ In Stock
$0.11 / Unit
View Datasheet →BSS816NWH6327XTSA1
✅ Drop-In✓ In Stock
$0.14 / Unit
View Datasheet →BSL316CH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (N-channel ID) | 1.4 A |
| Continuous Drain Current (P-channel ID) | 1.5 A |
| Total Power Dissipation (Ptot) | 500 mW |
| Package | PG-TSOP6-6 (TSOP6, 6-pin) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Technology | OptiMOS low-voltage MOSFET |
| Channel Type | N-channel + P-channel (dual) |
| Pin Count | 6 |
| RoHS Status | Compliant |
BSL316CH6327XTSA1 Pin Configuration
| Pin 1 | G1 — Gate of MOSFET 1 (N-channel) |
| Pin 2 | S1 — Source of MOSFET 1 (N-channel, shared substrate) |
| Pin 3 | D2 — Drain of MOSFET 2 (P-channel) |
| Pin 4 | D1 — Drain of MOSFET 1 (N-channel) |
| Pin 5 | G2 — Gate of MOSFET 2 (P-channel) |
| Pin 6 | S2 — Source of MOSFET 2 (P-channel) |
Safe Operating Area (per transistor)
Typical Applications
BSL316CH6327XTSA1 is suitable for 6 applications: Small DC Motor Drive (H-Bridge), USB Type-C Power Switching and Load Management, Logic-Level Translation and Level Shifting, Portable and Battery-Powered Load Switching, Audio Output Push-Pull Stage, Signal Multiplexing and Analog Switching.
Small DC Motor Drive (H-Bridge)
The BSL316CH6327XTSA1 integrates one N-channel and one P-channel MOSFET in the same PG-TSOP6-6 package, making it well suited for half-bridge and H-bridge motor drive stages in low-voltage brushless or brushed DC motors. With 30 V VDS, 1.4 A (N-ch) / 1.5 A (P-ch) continuous ID, the part can directly drive small fans, vibration motors, and stepper motor windings from 3.3 V or 5 V logic without external level shifters. According to the Infineon OptiMOS datasheet, the complementary pair topology eliminates gate-drive complexity and synchronizes switching edges, which reduces dead-time losses and EMI in PWM-driven motor control. The compact TSOP6 footprint fits space-constrained motion-control modules in wearables, camera gimbals, and portable appliances. Designers should size gate resistors (typically 10-100 ohms) to control ringing and ensure switching frequency stays within the package's 500 mW dissipation budget.
Recommended
USB Type-C Power Switching and Load Management
The BSL316CH6327XTSA1's complementary N+P configuration supports USB Type-C VBUS load-switch and reverse-current-blocking topologies where one MOSFET switches the rail and the other blocks back-feed. The 30 V VDS provides ample margin above the 20 V USB-PD maximum, while the 1.4 A/1.5 A continuous drain current covers standard 5 V/3 A USB ports and lower-power 20 V PD contracts. According to the Infineon OptiMOS datasheet, the low RDS(on) (verify against datasheet value) minimizes voltage drop and self-heating during continuous load. The TSOP6 package is small enough for Type-C dongles, hubs, and embedded USB-C ports. A typical circuit places the N-channel on the high-side return path and the P-channel as a low-side reverse-blocking element, controlled directly from a Type-C controller GPIO. Thermal dissipation must be derated at elevated ambient temperatures in enclosed dongle housings.
Recommended
Logic-Level Translation and Level Shifting
The BSL316CH6327XTSA1's complementary pair topology is ideal for bidirectional logic-level translation between 1.8 V, 3.3 V, and 5 V domains in mixed-voltage designs. The N-channel device can be used in a common-drain or open-drain configuration, while the P-channel serves as a pull-up element on the higher-voltage side, eliminating external resistor dividers. According to the Infineon OptiMOS datasheet, the low gate-threshold voltages (verify exact value) support direct drive from low-voltage microcontrollers without level-shifter ICs. The 30 V VDS rating comfortably covers translation between 1.8 V GPIO and 24 V industrial signals when needed. The TSOP6 footprint fits between processor and peripheral headers on densely populated IoT sensor boards. Designers should add small series resistors to limit inrush currents when translating high-speed signals such as SPI or I2C buses.
Recommended
Portable and Battery-Powered Load Switching
The BSL316CH6327XTSA1's complementary pair enables ultra-low quiescent load-switch designs for battery-powered IoT nodes, wearables, and sensor modules where every microampere matters. The P-channel MOSFET acts as a high-side load disconnect controlled directly from a low-leakage GPIO, while the N-channel can serve as a low-side gate keeper or auxiliary switch. According to the Infineon OptiMOS datasheet, the small-signal MOSFET process achieves nanoamp-level off-state leakage (verify against datasheet), critical for multi-year battery-life designs. The 30 V VDS allows direct use from 1S Li-ion (4.2 V max) and 2S alkaline (3 V) battery stacks with large safety margins. The TSOP6 package saves PCB area versus discrete SOT-23 pairs and supports reflow soldering compatible with standard lead-free profiles. Quiescent current budgets must account for gate leakage across temperature extremes.
Recommended
Audio Output Push-Pull Stage
The BSL316CH6327XTSA1's matched N-channel and P-channel transistors can form a class-AB push-pull output buffer for small-signal audio applications such as headphone amplifiers, line drivers, or transducer excitation circuits. With 30 V VDS the part handles up to +/-15 V audio swings, while the 1.4 A/1.5 A peak current capability drives low-impedance headphones and small speakers. According to the Infineon OptiMOS datasheet, the matched complementary pair minimizes crossover distortion by ensuring symmetric RDS(on) and gate-threshold characteristics between N and P devices. The TSOP6 package allows integration into compact headphone dongles, USB audio adapters, and hearing-aid driver boards. Designers should bias the gates slightly above threshold to control crossover dead-zone and add source resistors to limit shoot-through current during transitions.
Recommended
Signal Multiplexing and Analog Switching
The BSL316CH6327XTSA1 serves as a compact analog signal multiplexer in test-and-measurement, data-acquisition, and instrumentation front-ends where board area is critical. The complementary pair can be configured as a T-switch or dual-pole switch, providing low on-resistance paths (verify RDS(on) against datasheet) and high off-isolation for switching analog signals up to 30 V peak-to-peak. According to the Infineon OptiMOS datasheet, the small-signal process minimizes charge injection and leakage, preserving measurement accuracy in precision circuits. The TSOP6 footprint fits into multiplexer daughter-boards and front-end modules for oscilloscope probes, sensor signal conditioners, and ATE pin electronics. Designers should evaluate gate-charge effects when switching high-bandwidth signals and add protective clamping for ESD-sensitive test points.
Recommended
Recommended Products Summary
Engineering reference data for BSL316CH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSL215CH6327XTSA1 | BSS123NH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|---|---|
| Package | PG-TSOP6-6 (TSOP6) | PG-TSOP6-6 - same | PG-TSOP6-6 - same | PG-TSOP6-6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Configuration | Complementary N+P pair | Complementary N+P pair | Single N-channel | Single N-channel |
| Drain-Source Voltage (VDS) | 30 V | 20 V | 100 V | 30 V |
| Continuous Drain Current (ID) | 1.4 A (N) / 1.5 A (P) | Lower ratings | 0.17 A | 1.6 A |
| Total Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW |
| Technology | OptiMOS low-voltage | OptiMOS low-voltage | Standard small-signal N-ch | OptiMOS small-signal N-ch |
| Pin-to-Pin Compatible | N/A (target part) | Yes - same TSOP6 complementary pinout | No - single N-ch pinout | No - single N-ch pinout |
Key Differentiators
- Integrated complementary N+P pair in single TSOP6 (vs BSS316NH6327XTSA1)
- OptiMOS technology for low RDS(on) per area (vs BSS123NH6327XTSA1)
- Matched N+P process symmetry (vs BSL215CH6327XTSA1)
Design Notes
Estimated: The BSL316CH6327XTSA1 has a total package power dissipation of 500 mW at TA=25 C. At full load with both MOSFETs conducting (worst case push-pull crossover), the die temperature rise must be evaluated against the package thermal resistance. For a TSOP6 with theta_JA typically around 100 C/W on a 1 oz 1-square-inch copper pour, junction temperature rise is approximately 50 C above ambient at 500 mW - keep ambient below 100 C for safe operation.
Place the BSL316CH6327XTSA1 on a continuous ground copper pour under the exposed pad to maximize heat dissipation. Route gate traces away from drain switching nodes to minimize capacitive coupling, and use 10-100 ohm gate resistors in series to damp high-frequency ringing. Keep the source pin trace short to reduce parasitic inductance that can cause gate-drive oscillations in fast-switching applications.
Do not exceed the absolute maximum VGS rating (verify against datasheet, typically +/-8 V for OptiMOS). Driving the gates from logic levels above the maximum VGS can permanently damage the thin gate oxide. When using the complementary pair in a half-bridge, ensure adequate dead-time between switching transitions to prevent shoot-through currents that exceed the 500 mW package dissipation limit.
Separate the N-channel and P-channel gate-drive return paths to avoid ground bounce that could falsely trigger the complementary device. Use a star-ground topology at the device source pins and keep high-current drain traces short and wide (at least 0.5 mm per ampere). Place bulk decoupling capacitors close to the drain supply rails to suppress voltage transients during switching.
Compliance Information
RoHS and lead-free confirmed per Infineon product page and DigiKey listing. REACH compliance stated by Infineon. Not AEC-Q100 qualified - for automotive applications use AEC-Q100-qualified Infineon MOSFETs from the same OptiMOS family.
