BSO150N03MDGXUMA1 vs BSO613SPVGXUMA1 Comparison
Detailed side-by-side comparison of BSO150N03MDGXUMA1 by Infineon and BSO613SPVGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveInfineon
BSO613SPVGXUMA1 - P-Ch 60V 3.44A MOSFET | Infineon | Load Switch
BSO613SPVGXUMA1 β ActiveSpecification Comparison
| Parameter | BSO150N03MDGXUMA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSO150N03MDGXUMA1 | β |
| Product Type | Dual N-Channel MOSFET Array | β |
| Technology | OptiMOS 3M (30V trench MOSFET) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) max per channel | 9.3 A | β |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | β |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS max +/-V] |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | β |
| Power Dissipation (PD) max | 1.4 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Package | PG-DSO-8 (SO-8 with exposed pad) | PG-DSO-8-6 (Power-SO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| RoHS Status | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | β |
| FET Type | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TA=25C | β | -3.44 A |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed value] |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes (per Infineon OptiMOS family) |
| Pin Count | β | 8 (6 active, 2 thermal/NC) |