BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
MPN: BSO150N03MDGXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.43 | $430.00 |
| 2,500 | $0.37 | $925.00 |
BSO150N03MDGXUMA1 Overview
A dual MOSFET (also called a MOSFET array or half-bridge FET) is a semiconductor device integrating two independent MOSFETs in a single package, used primarily to halve board space and parasitic inductance in synchronous buck/boost converters, motor half-bridges, and OR-ing circuits. The BSO150N03MDGXUMA1 sits in the power MOSFET family within the discrete semiconductors hierarchy, optimized for low-voltage (<=30V) point-of-load and DC-DC conversion applications.
Key features include a 30V drain-source breakdown voltage (VDS), 9.3A continuous drain current (ID) per channel at 25C, 15 mOhm maximum RDS(on) at VGS=10V, and a low threshold voltage around 1.0V typical that simplifies logic-level gate driving. The SO-8 footprint with exposed pad (PG-DSO-8) provides a thermal resistance of approximately 50 C/W, supporting moderate continuous currents with proper PCB copper thermal management.
The OptiMOS 3M technology uses a trench-gate structure with an advanced epitaxial layer, achieving the lowest figure-of-merit (FOM = RDS(on) x Qg) in the 30V class for its generation. This makes the device particularly suitable for synchronous rectification in server, datacom, and telecom voltage regulator modules where every milliwatt of conduction and switching loss translates directly into system efficiency and thermal headroom.
Typical applications include synchronous buck converters in server VRMs, OR-ing FETs in redundant power supplies, motor drive half-bridges, battery protection circuits, and load-side hot-swap switches. The low gate charge also makes it attractive for high-frequency point-of-load converters where switching loss dominates at 500 kHz to 1 MHz.
When designing with this part, ensure the gate driver can source and sink peak currents consistent with the total gate charge (Qg) at the operating frequency. Use Kelvin-source connection techniques (pin 2 and pin 7 typically serve as gate returns) when operating above 100 kHz to suppress common-source inductance ringing that would otherwise limit usable switching speed.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB design notes not found in the manufacturer datasheet, enabling faster component selection and second-source qualification.
Drop-in alternatives for BSO150N03MDGXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSO150N03MDGXUMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level, Avalanche Rated.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSO150N03MD-G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC0902NSATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC120N03LSGATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSZ036NE2LSATMA1
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →IRF8736PBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →NTMFS4934NT1G
✅ Drop-In📋 Reference alternative (not in catalog)
BSO150N03MDGXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 |
| Product Type | Dual N-Channel MOSFET Array |
| Technology | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) max per channel | 9.3 A |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V |
| Gate-Source Voltage (VGS) max | 20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V |
| Power Dissipation (PD) max | 1.4 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Channel Configuration | Dual N-Channel (independent) |
BSO150N03MDGXUMA1 Pin Configuration
| Pin 1 | S1 — Source of MOSFET 1 |
| Pin 2 | G1 — Gate of MOSFET 1 |
| Pin 3 | S2 — Source of MOSFET 2 |
| Pin 4 | G2 — Gate of MOSFET 2 |
| Pin 5 | D2 — Drain of MOSFET 2 |
| Pin 6 | D2 — Drain of MOSFET 2 (continued) |
| Pin 7 | D1 — Drain of MOSFET 1 |
| Pin 8 | D1/Pad — Drain of MOSFET 1 / Thermal pad (exposed) |
Safe Operating Area (DC, TJ=25C)
Typical Applications
BSO150N03MDGXUMA1 is suitable for 6 applications: Synchronous Buck Converter (POL), OR-ing FET for Redundant Power Supplies, Brushless DC Motor Drive Half-Bridge, Li-ion Battery Protection Circuit, Hot-Swap / Inrush Current Limiter, Load-Side DC Switch / Power Mux.
Synchronous Buck Converter (POL)
The BSO150N03MDGXUMA1 fits 12V-input synchronous buck point-of-load converters in servers and datacom equipment, where its two integrated 30V N-channel MOSFETs implement the high-side and low-side switches in a single SO-8 footprint. The 15 mOhm RDS(on) at 10V VGS keeps conduction loss below 2% at 5A output, and the low Qg/OSS of OptiMOS 3M keeps switching loss manageable at 300-500 kHz. Designers place the dual MOSFET adjacent to the driver IC to minimize loop inductance, using the exposed pad as both thermal relief and ground return. Compared to two discrete SO-8 parts, the integrated array reduces board area by approximately 50% and cuts the high-current power loop by half, directly improving efficiency and EMI.
Recommended
OR-ing FET for Redundant Power Supplies
In N+1 redundant -48V or 12V power-supply architectures, the BSO150N03MDGXUMA1 serves as a hot-swap OR-ing element that connects a supply to the load bus while blocking reverse current when a supply fails or is hot-swapped. The 30V VDS provides comfortable margin above typical 12V bus voltages, and the two independent channels enable dual-feed OR-ing within one SO-8, doubling the power path redundancy per package. The 15 mOhm RDS(on) generates roughly 0.45W dissipation at 5A load, manageable with the SO-8 exposed pad soldered to adequate copper. Designers add a gate-source pull-down resistor and a controller (such as a hot-swap IC) to turn off the channel during fault conditions, with the low gate charge enabling microsecond response times.
Recommended
Brushless DC Motor Drive Half-Bridge
The BSO150N03MDGXUMA1 can drive one half-bridge leg of a low-voltage brushless DC (BLDC) motor in applications such as small cooling fans, computer peripheral motors, and 12V-class robotic actuators. Each channel handles up to 9.3A continuous, supporting motor currents typical of sub-100W BLDC drives. The two-channel integration simplifies PCB layout for a 3-phase inverter using three such packages, with each driving one phase leg. The low gate charge simplifies drive from standard 3.3V or 5V logic via a small gate-drive bootstrap circuit, and the 30V VDS gives headroom for inductive kick at 24V supply rails. For higher-current drives, parallel the two channels within one package to share current and lower effective RDS(on) to ~7.5 mOhm.
Recommended
Li-ion Battery Protection Circuit
The BSO150N03MDGXUMA1 functions as the back-to-back protection FETs in a 1- to 3-cell Li-ion battery pack, where its 30V VDS comfortably exceeds the maximum 12.6V pack voltage and its 15 mOhm RDS(on) limits steady-state discharge loss to under 1% at typical 5A discharge currents. The two channels enable independent charge-path and discharge-path control within a single SO-8 footprint, a common architecture for battery management ICs that drive each FET pair independently. The low gate threshold (~1V typical) allows direct drive from low-voltage battery management ICs without a separate charge pump, though a 10V gate drive is recommended for full RDS(on) performance. Designers verify SOA capability at short-circuit conditions, where the part must sustain fault current for milliseconds before the protection IC turns it off.
Recommended
Hot-Swap / Inrush Current Limiter
In 12V or 24V board-level hot-swap circuits, the BSO150N03MDGXUMA1 acts as the inrush-limiting element that ramps up a downstream bulk capacitor without tripping the upstream fuse or current limit. The two channels can be paralleled within one SO-8 to halve RDS(on) to ~7.5 mOhm, supporting hot-swap currents up to ~15A per package. The 30V VDS gives margin for transient overshoot at 24V nominal rails, and the SO-8 exposed pad handles the dissipation during steady-state pass-through. Designers combine the dual MOSFET with a hot-swap controller (e.g., a current-sense amplifier plus timer) to gate the channels during insertion and short-circuit events, relying on the low gate charge for fast fault response.
Recommended
Load-Side DC Switch / Power Mux
The BSO150N03MDGXUMA1 implements a low-side or high-side load switch in distributed power systems, USB power delivery, and power-mux circuits that select between two input sources. Each channel's 15 mOhm RDS(on) and 9.3A rating covers the typical 5A-7A switching load of industrial or computing subsystems, and the dual-channel integration lets the designer switch two loads or sources within one SO-8. The low gate charge enables fast turn-on/off transitions (<1 microsecond with a strong gate driver), minimizing switching losses in PWM-modulated load management. Designers typically drive the gates with a logic-level MOSFET driver and add a pull-down on the gate to ensure defined off-state during controller reset.
Recommended
Recommended Products Summary
Engineering reference data for BSO150N03MDGXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSO150N03MD-G | BSC0902NSATMA1 | BSC120N03LSGATMA1 | NTMFS4934NT1G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | SO-8FL (pin-compatible) |
| Channel Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel |
| VDS max | 30 V | 30 V | 30 V | 30 V | 30 V |
| ID max per channel | 9.3 A | 9.3 A | ~11 A | ~11 A (single channel) | ~20 A (single channel) |
| RDS(on) max at 10V VGS | 15 mOhm | 15 mOhm | ~9 mOhm | ~12 mOhm | ~6 mOhm |
| Technology | OptiMOS 3M | OptiMOS 3M | OptiMOS 3 | OptiMOS 3 | onsemi Trench |
| Power Dissipation max | 1.4 W | 1.4 W | 1.6 W | 1.6 W | 2.0 W |
Key Differentiators
- Two independent N-channel MOSFETs in one SO-8 (vs BSC120N03LSGATMA1)
- Lower RDS(on) per channel than comparable dual arrays (vs BSZ036NE2LSATMA1)
- Infineon OptiMOS 3M best-in-class figure-of-merit (vs NTMFS4934NT1G (onsemi))
Design Notes
The BSO150N03MDGXUMA1 in PG-DSO-8 has a junction-to-ambient thermal resistance of approximately 50 C/W with a standard 1 oz copper SO-8 footprint on FR-4. At 9.3A continuous per channel with 15 mOhm RDS(on), each channel dissipates ~1.3W at full load with 10V gate drive, which exceeds the 1.4W absolute rating without enhanced copper. Designers must increase the drain copper pad area (connect to the exposed thermal pad) to at least 1 square inch of 2 oz copper or use thermal vias to an internal ground plane to keep junction temperature below 125C. Estimated: assuming theta_JA=50 C/W, ambient 70C, channel dissipation 1.3W, junction rise = 65C -> TJ = 135C, marginal without copper enhancement; add 1 sq-in 2 oz copper to drop theta_JA to ~35 C/W and TJ to ~115C.
Place the BSO150N03MDGXUMA1 as close as possible to the gate driver IC to minimize the gate-drive loop inductance, which is critical at switching frequencies above 100 kHz. Use a Kelvin-source connection: route the gate-return current through the source pin directly adjacent to the gate pin (not through the power ground plane), suppressing common-source inductance that would otherwise slow switching transitions and cause ringing. Keep the power loop (drain-switch-source-load-return) area minimal to reduce parasitic inductance that generates voltage overshoot during switching transitions.
Do not exceed the 20V VGS absolute maximum rating of the BSO150N03MDGXUMA1 - transient overshoot from a poorly-tuned gate driver can punch through the gate oxide and destroy the device. Add a 10k resistor between gate and source to ensure defined off-state during controller reset or brownout. Verify the SOA curve at your application's worst-case fault condition (e.g., output short circuit at maximum input voltage) before committing the design; the DC SOA line at 30V VDS allows only ~1.4A continuous, so sustained fault currents require either a fuse, current limit, or fast-turn-off protection.
Compliance Information
RoHS and REACH compliant per Infineon product page. XUMA1 suffix indicates lead-free 13-inch tape-and-reel packaging. Not AEC-Q100 qualified; for automotive applications use Infineon's automotive-grade OptiMOS variants.
